IEEE International Symposium on Circuits and Systems
DOI: 10.1109/iscas.1990.112593
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Second generation switched-current signal processing

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Cited by 67 publications
(19 citation statements)
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“…Herein, M i is symbolized by black box for generality, and represents the elementary current memory, which samples input current on phase ϕ i and sustains on the next phase. Simply, M i can be realized by an NMOS transistor with associated switch closed on phase ϕ i [10], the so-called second generation SI memory cell. But, for cancelling non-ideal behaviour, several enhancement techniques such as cascode and S 2 I can be used [10][11][12][13][14][15][16].…”
Section: Building Cellsmentioning
confidence: 99%
See 2 more Smart Citations
“…Herein, M i is symbolized by black box for generality, and represents the elementary current memory, which samples input current on phase ϕ i and sustains on the next phase. Simply, M i can be realized by an NMOS transistor with associated switch closed on phase ϕ i [10], the so-called second generation SI memory cell. But, for cancelling non-ideal behaviour, several enhancement techniques such as cascode and S 2 I can be used [10][11][12][13][14][15][16].…”
Section: Building Cellsmentioning
confidence: 99%
“…Simply, M i can be realized by an NMOS transistor with associated switch closed on phase ϕ i [10], the so-called second generation SI memory cell. But, for cancelling non-ideal behaviour, several enhancement techniques such as cascode and S 2 I can be used [10][11][12][13][14][15][16]. Particularly, when S 2 I technique is selected to realize M i and J, Fig.1(a) can be specialized to the structure used in [17,18].…”
Section: Building Cellsmentioning
confidence: 99%
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“…For example, SC circuit is not compatible with standard digital VLSI processing since the need for linear floating capacitors leads to the extra fabrication step, e.g. double polysilicon [18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…1 is a SI memory cell, for which several solutions exist [1][2][3]. The application of the accurate SI memory cell of Fig.…”
Section: Memory Circuitmentioning
confidence: 99%