Second-Harmonic Efficiency and Reflectivity of GaAs During Femtosecond Melting

Ultrafast electronic disordering during femtosecond laser melting of GaAs

“…Our previous reflectivity measurements with a p-polarized probe on a (100) GaAs surface [17] also rise to a steady value consistent with a molten phase. Apparently, above a threshold carrier density of -8x10 ' cm, the electronic system becomes ionized to a much higher degree than the 5% expected from linear absorption.…”