1995
DOI: 10.1063/1.115003
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Second harmonic generation and atomic-force microscopy studies of porous silicon

Abstract: Structural properties of porous silicon were studied with atomic-force microscopy (AFM) and optical second harmonic generation (SHG). Depending on etching conditions, the SHG response was observed to be either anisotropic, showing C2v symmetry, or isotropic. This correlated with AFM observations of quasi ordered structures in the first case. The Si etching process was studied by in situ SHG measurements.

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Cited by 8 publications
(2 citation statements)
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“…12 TappingMode was used in this study since the surfaces of the porous layers were too fragile to be imaged in contact mode SFM. 13 The SFM images of samples obtained by etching silicon at different current densities are shown in Figure 1. Using relatively low current densities (150 mA/cm 2 ), pores are scarcely visible and the nearly flat surface is dominated by a distinct hillock structure (Figure 1A).…”
Section: Resultsmentioning
confidence: 99%
“…12 TappingMode was used in this study since the surfaces of the porous layers were too fragile to be imaged in contact mode SFM. 13 The SFM images of samples obtained by etching silicon at different current densities are shown in Figure 1. Using relatively low current densities (150 mA/cm 2 ), pores are scarcely visible and the nearly flat surface is dominated by a distinct hillock structure (Figure 1A).…”
Section: Resultsmentioning
confidence: 99%
“…Intensive work has been carried out in this field. [1][2][3][4] Fewer papers deal with the use of SHG as a probe of thin film structure. 5,6 In this paper, we have used SHG to study the microstructure of aluminum nitride ͑AlN͒ thin films.…”
Section: Introductionmentioning
confidence: 99%