Second-harmonic generation in periodically poled GaN

Chowdhury, Aref; Ng, H. M.; Bhardwaj, Manish; Weimann, Nils

doi:10.1063/1.1599044

Cited by 164 publications

(118 citation statements)

References 15 publications

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“…Due to its plane wave, TM polarization refractive index values are more sensitive to the layer quality. The measurement results of refractive indices versus wavelength are in good agreement with previously reported values [10,[22][23]. To test the Y-branch design, the 1.55 µm light as an input wave is coupled in through a linear waveguide.…”

Section: Resultssupporting

confidence: 75%

Design of GaN-Based Low-Loss Y-Branch Power Splitter

Purnamaningsih

Saraswati

Poespawati

et al. 2015

MST

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We present a Y-branch power splitter design with a multimode section using GaN on Sapphire at telecommunication wavelength. The GaN sample optical properties were also investigated, resulting in a refractive index for the GaN layers nTE=2.289±0.001 and nTM=2.324±0.00. Optimization of the structure parameters for this structure was conducted accurately using BPM methods. The results demonstrated the possibility of realizing a GaN-based Y-branch power splitter for various applications. AbstrakDesain Pembagi Daya Pencabangan Y Rugi-Rugi Rendah Berbasis GaN. Pada penelitian ini dilaporkan desain pembagi daya pencabangan Y dengan memanfaatkan pandu gelombang moda jamak pada panjang gelombang telekomunikasi menggunakan material GaN pada Safir. Hasil pengukuran sifat optik menunjukkan bahwa indek bias sampel GaN pada Safir adalah nTE=2,289±0,001 dan nTM= 2,324±0,00. Dari hasil optimasi parameter struktur dengan metoda BPM ditunjukan bahwa pembagi daya pencabangan Y berbasis bahan GaN.berpotensi untuk direalisasi

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Section: Resultssupporting

confidence: 75%

Design of GaN-Based Low-Loss Y-Branch Power Splitter

Purnamaningsih

Saraswati

Poespawati

et al. 2015

MST

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“…On the other hand, a spatially periodic polarity-inverted film structure, as shown in Fig. 1(d), is required for waveguide-type quasi-phase matching NLO devices, [10][11][12] because the maximum intensity of the second harmonic generation (SHG) appears when the c-axis is parallel to the E-vector of the incident light. Conversely, the SHG intensity goes to zero when the c-axis is perpendicular to the E-vector.…”

Section: -8mentioning

confidence: 99%

Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

Suzuki

Yanagitani

Okada

2014

Applied Physics Letters

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Polarity inversion in wurtzite film is generally achieved by the epitaxial growth on a specific under-layer. We demonstrate polarity inversion of c-axis oriented ScAlN films by substrate ion beam irradiation without using buffer layer. Substrate ion beam irradiation was induced by either sputtering a small amount of oxide (as a negative ion source) onto the cathode or by applying a RF bias to the substrate. Polarity of the films was determined by a press test and nonlinear dielectric measurement. Second overtone thickness extensional mode acoustic resonance and suppression of fundamental mode resonance, indicating complete polarity inversion, were clearly observed in bilayer highly oriented (000-1)/(0001) ScAlN film.

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“…GaN exhibits strong second-order nonlinearity [11][12][13][14], with a χ (2) coefficient of the same order as LiNbO 3 . Its outstanding electrical, thermal and optoelectronic properties have enabled a broad range of technological applications including high speed and high power electronics [15], blue/UV light emitting and laser diodes [16].…”

Section: Introductionmentioning

confidence: 99%

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Xiong¹,

Pernice²,

Ryu³

et al. 2011

Advanced Photonics

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Abstract:We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The χ (2) nonlinear susceptibility is measured to be as high as 16 ± 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of χ (2) enabled sum-/difference-frequency processes.

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Second-harmonic generation in periodically poled GaN

Cited by 164 publications

References 15 publications

Design of GaN-Based Low-Loss Y-Branch Power Splitter

Design of GaN-Based Low-Loss Y-Branch Power Splitter

Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

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