2020
DOI: 10.1070/qel17185
|View full text |Cite
|
Sign up to set email alerts
|

Second-harmonic generation in zinc blende crystals under combined action of femtosecond optical and strong terahertz fields

Abstract: The influence of a short intense (with an electric field strength up to 250 kV cm−1) terahertz (THz) pulse on the generation of second harmonic (SH) of Ti : sapphire laser radiation in crystals of zinc blende type (InAs and GaAs), characterised by nonzero bulk quadratic susceptibility, is investigated. It is experimentally shown for InAs(100) that, in the case of s-polarised first and second harmonics, an application of s-polarised THz field changes significantly the SH signal. The THz field-induced azimuthal … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 10 publications
(4 citation statements)
references
References 12 publications
0
4
0
Order By: Relevance
“…The SH polarization components dependence intensity on the mutual orientation of the polarization of excitation radiation in reference to the crystallophysical axes was measured, whereby the experiment recorded the SH polarization parallel to the azimuthally changing linear polarization of the excitation radiation (hereinafter referred to as the azimutal dependence). The experimental and numerical model data for the ideal crystal in a given local area were analyzed to obtain the quantitative information about the crystal state of the subsurface layer, its orientation and the growing layers orientation rotation within the plane and the growth direction, as well as a number of other characteristics with an error no worse one degree [26][27][28][29][34][35][36][37][38][39][40]. The crystal state of the MCT layers was measured by azimuthal SH signal intensity dependence measurement with layerby layer etching.…”
Section: Samples and Experimental Proceduresmentioning
confidence: 99%
See 2 more Smart Citations
“…The SH polarization components dependence intensity on the mutual orientation of the polarization of excitation radiation in reference to the crystallophysical axes was measured, whereby the experiment recorded the SH polarization parallel to the azimuthally changing linear polarization of the excitation radiation (hereinafter referred to as the azimutal dependence). The experimental and numerical model data for the ideal crystal in a given local area were analyzed to obtain the quantitative information about the crystal state of the subsurface layer, its orientation and the growing layers orientation rotation within the plane and the growth direction, as well as a number of other characteristics with an error no worse one degree [26][27][28][29][34][35][36][37][38][39][40]. The crystal state of the MCT layers was measured by azimuthal SH signal intensity dependence measurement with layerby layer etching.…”
Section: Samples and Experimental Proceduresmentioning
confidence: 99%
“…The GaAs substrate and the CdTe and ZnTe layers are transparent within the excitation radiation region ∼ 1 µm [37][38][39].…”
Section: Analysis Of the Behavior And Recording Of The Azimuthal Depe...mentioning
confidence: 99%
See 1 more Smart Citation
“…The dependence of SHG components polarization intensity on the mutual orientation of the exciting radiation polarization relative to the crystallophysical axes, when the SH polarization, parallel or perpendicular to the azimuthally varying linear polarization of the exciting radiation (further as the text goesangular or azimuthal dependence) is registered, allows obtaining quantitative information about the crystalline state of the surface layer, its orientation and several other properties while comparing experimental and model data in a given local area, to an accuracy less than or equal to a degree [1][2][3][4][5][6][7][8][9][10][11]. The diagnostic capabilities of the SHG method are widely used, for example, when studying the electronic and magnetic properties of materials by the characteristics the of identified magnetically induced second optic harmonic generation in diamagnetic and paramagnetic semiconductors [12,13].…”
Section: Introductionmentioning
confidence: 99%