Second Harmonic Generation Response in Thermally reconstructed Multiferroic β′- Gd2(MoO4)3 Thin Films

Coy, Emerson; Graczyk, Piotr; Yate, Luis; Załęski, Karol; Gapiński, Jacek; Kuświk, Piotr; Mielcarek, S.; Stobiecki, F.; Mróz, B.; Ferrater, C.; Jurga, Stefan

doi:10.1038/s41598-017-12370-y

Cited by 6 publications

(2 citation statements)

References 75 publications

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“…It should be emphasized that before the establishment of SHG as a powerful probe for ferroic states [76,123,124,[138][139][140][141][142][143], SHG used to be devoted to the study of surface and interface states in centrosymmetric materials [137]. Additionally, the surface electronic states of a wide range of material classes, including metals [144,145], semiconductors [146,147], and insulators [148,149] can be accessed with SHG. Here, we highlight efforts dealing with remote access to surface morphologies and ferroelectric domain states in thin films.…”

Section: X-ray Diffraction (Xrd)-xrd Is a Powerful Techniquementioning

confidence: 99%

In situ monitoring of epitaxial ferroelectric thin-film growth

Sarott

Gradauskaite

Nordlander

et al. 2021

J. Phys.: Condens. Matter

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In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structural in situ diagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generation in situ. The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.

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Section: X-ray Diffraction (Xrd)-xrd Is a Powerful Techniquementioning

confidence: 99%

In situ monitoring of epitaxial ferroelectric thin-film growth

Sarott

Gradauskaite

Nordlander

et al. 2021

J. Phys.: Condens. Matter

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“…With the coupling of these two properties, these materials show interesting physics such as ferroelectric properties that can be changed by magnetic fields and ferromagnetic properties that can be controlled by electric field [1,2,3,4]. Multiferroic materials can be applied in the development of new devices like sensors [5,6,7], transducers [8,9], second harmonic generation [10] and information storage [11,12,13]. However, most of multiferroic materials exhibit spontaneous polarization and magnetization only at low temperature [14,15].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Orthorhombic GaFeO3 Thin Films on SrTiO3 (111) Substrates by Simple Sol-Gel Method

et al. 2019

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A Sol-gel method assisted with spin-coating has been successfully used to grow orthorhombic GaFeO3 epitaxial films on SrTiO3 (111) substrates for the first time. The film with Pna21 crystal structure has been grown along the c-axis. The rocking curve of (004) reflection shows that the Full-Width at Half-Maximum (FWHM) value could be determined to be 0.230°, indicating good single crystallinity and high quality. X-ray Φ scan reveals a three-fold symmetry of the substrate and a six-fold symmetry of the film, respectively. The in-plane domains rotate 60° from each other in the film. Uniform film with dense structure, columnar grains with similar grain size was obtained. The thickness of the film was evaluated to be ~170 nm. The roughness value (RMS) measured by AFM was 4.5 nm, revealing a flat film. The in-plane Magnetization versus Magnetic field (M-H) curve at 5 K performs a typical ferri- or ferromagnetic hysteresis loop with a saturated magnetization (Ms) value of 136 emu/cm3. The Curie temperature could be determined to be 174 K. Compared to Pulsed Laser Deposition (PLD), the sol-gel method can prepare large area films with low cost. These new films show promising applications in multiferroic devices.

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Single‐Phase Multiferroics

Graczyk

Coy

2021

Nanostructured Multiferroics

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Second Harmonic Generation Response in Thermally reconstructed Multiferroic β′- Gd2(MoO4)3 Thin Films

Cited by 6 publications

References 75 publications

In situ monitoring of epitaxial ferroelectric thin-film growth

In situ monitoring of epitaxial ferroelectric thin-film growth

Epitaxial Growth of Orthorhombic GaFeO3 Thin Films on SrTiO3 (111) Substrates by Simple Sol-Gel Method

Single‐Phase Multiferroics

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