geometries of microcavities supporting "whispering gallery modes" (WGMs) the light field can be confined in extremely small volumes, reaching very high power density and very narrow spectral linewidth. As a result, the ultrahigh in-cavity intensities significantly enhance the photon-tophoton interactions, leading to ultrahigh efficiencies of nonlinear optical process even at low-power optical excitation. In addition, the small scale enables the construction of resonator-based functional devices with very high integration. With combination of these intriguing features, low-power-consumption, low-cost on-chip devices can be developed successfully. The material platforms for microresonators are crucial for the practical applications. For example, silicon dioxide (SiO 2 ) is considered as one of the most commonly used materials for microresonators, and great success has been achieved based on this easy-to-fabricate platform. [29,30] Recently, with the well-developed technology for on-chip circuits fabrication, some semiconductor materials have been harnessed as the platforms of microresonators for more electro-optic potentials, such as silicon (Si), [31,32] SiC, [33][34][35][36] ZnO, [37,38] GaN, [39,40] or AlN [41,42] . Among them, lithium niobate (LiNbO 3 or LN) has risen into the forefront of microresonator demonstrations and drawn extensive interests in photonics and electronics.Lithium niobate is a multi-functional dielectric crystal that combines a number of excellent features, [43] such as electrooptic, nonlinear optical, acousto-optic, ferroelectric, piezoelectric, photorefractive, photo-luminescent properties, and receives a broad variety of applications in telecommunication, frequency conversion, optical storage, filtering, and quantum photonics. [44][45][46][47] The single-crystal thin film of LN is an ideal platform for microresonators owing to the unique combination of various excellent properties of the bulk. The major obstacle of the LN-based microcavities was the fabrication of high-quality LN thin films because the single-crystalline features cannot be well-preserved in thin-film LN produced by chemical methods of normal deposition that is applied for semiconductors. In addition, large-scale LN-thin film wafers are desired for further processing of on-chip devices. Recently, the so-called "lithium niobate on insulator" (LNOI) technology figures the major problem out and boosts the rapid development of the thin-film LN based devices. [48][49][50][51][52][53] Most used LN films are manufactured by smart " Ion cut" technique. The typical commercialized LN thin film based on ion cut consists of a single-crystalline LN thin film with thickness of 300-900 nm, a cladding layer of SiO 2 with thickness of 2-3 µm, and the supporting material (LN or Si bulk wafer). The fabrication process of ion-cut LN thin film can be referenced in details elsewhere. [54][55][56] The refractive Leveraging the outstanding nonlinear optical properties and the ultra-high spatial confinement of light, microresonators based on lith...