1999
DOI: 10.1103/physrevb.59.2915
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Second-harmonic spectroscopy of interband excitations at the interfaces of strainedSi(100)Si0.85Ge

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Cited by 38 publications
(37 citation statements)
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“…9 However, this approximation has proven to be useful for other transitions as well. 5,7,8,50 For the approximation in Eq. ͑12͒, it is assumed that the SHG response is resonant at the SHG photon energy with the fundamental photon energy far from a resonance.…”
Section: B Microscopic Originmentioning
confidence: 99%
See 1 more Smart Citation
“…9 However, this approximation has proven to be useful for other transitions as well. 5,7,8,50 For the approximation in Eq. ͑12͒, it is assumed that the SHG response is resonant at the SHG photon energy with the fundamental photon energy far from a resonance.…”
Section: B Microscopic Originmentioning
confidence: 99%
“…Erley et al 50 developed a theory to decompose spectroscopic SHG data into a number of separate resonant contributions. In this approach the spectroscopic SHG intensity is reproduced by 18,50 …”
Section: B Microscopic Originmentioning
confidence: 99%
“…The SHG intensity at a photon energy E ph = 3.4 eV is dominated by field-induced second harmonic generation and is therefore a reasonable measure of the field-effect passivation. 62 As shown by Terlinden et al differences in the field-effect passivation of Al 2 O 3 films can be analyzed with SHG measurements. 66 In Fig.…”
Section: Resultsmentioning
confidence: 99%
“…created by the Q f of passivation films. 62 The amplitude of the SHG intensity of the peak centered at the SHG photon energy of 3.4 eV is a measure for the electric-field at the Si surface when probing Si surfaces covered by dielectric films such as Al 2 O 3 . • C, i.e.…”
Section: Methodsmentioning
confidence: 99%
“…In order to separate different contributions to the SHG response, the spectra have been reproduced using a model in which the SHG intensity is approximated by a coherent superposition of CP-Iike resonances with excitonic line shapes evaluated at the substrate/film interface [22,25,26] /(2w) = IAzzz(w,B)fX~~,qr li~(w) (2) describes the propagation of the fundamental and SHG radiation in the film-substrate system. This film thickness dependent function includes linear optical effects, such as 000428 absorption, refraction, and interference due to multiple reflections within the AI 203 films [22].…”
Section: Resultsmentioning
confidence: 99%