WS 2 flakes have been grown successfully on SiO 2 (300 nm)/Si substrate via traditional low-pressure chemical vapor deposition method. We studied the controllable growth of WS 2 flakes on three of the growth parameters: the time of S-precursor introduction, the temperature of WO 3 precursor and the growth temperature. The as-prepared products were characterized by X-ray photoemission spectroscopy, Raman spectra and atomic force microscopy. It is found that the morphologies of WS 2 flakes and the products are highly dependent on the concentration of S-precursor, W-precursor and the ratio of W atoms to S atoms, while large-area WS 2 flakes up to 160 lm can be obtained. If the ratio of W/S is B1:2, we obtain triangular and hexagonal WS 2 flakes. On the contrary, if the ratio of W/S is [1:2, besides WS 2 flakes, W nanowires will be formed owing to the superfluous W atoms. This study can provide an important and practical guide to preparing large-area and high-quality two-dimensional transition metal dichalcogenides materials.