In this paper various types of films made of carbon nanotubes (CNTs) are presented. These films were prepared on different substrates (Al 2 O 3 , Si n-type) by the two-step method. The two-step method consists of physical vapor deposition step, followed by chemical vapor deposition step (PVD/CVD). Parameters of PVD process were the same for all initial films, while the duration times of the second step -the CVD process, were different (15, 30 min.). Prepared films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and field emission (FE) measurements. The I-E and F-N characteristics of electron emission were discussed in terms of various forms of CNT films. The value of threshold electric field ranged from few V/µm (for CNT dispersed rarely on the surface of the film deposited on Si) up to ∼20 V/µm (for Al 2 O 3 substrate).