Secondary-Emission Methods of Investigating the Structure and Composition of the Surface Layers of Solids

Abroyan, I.A.; Korablev, V. V.; Petrov, N. N.; Titov, A.

doi:10.1070/pu1977v020n07abeh005451

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…Similar strong surface disordering, observed by RBS/C, is typical for bombardment of Si with light ions at room temperature. [9][10][11][12][13][14] However, Fig. 1 shows that a relatively large surface defect peak is also present in Si bombarded with MeV heavy ions at low temperature.…”

Section: Methodsmentioning

confidence: 99%

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

Titov

Kucheyev

Belyakov

et al. 2001

Journal of Applied Physics

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The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon Bi 2 ions ͑the so-called molecular effect͒ is studied by Rutherford backscattering/channeling spectrometry. Results show that the damage buildup is sigmodal even for such heavy-ion bombardment at liquid nitrogen temperature. This strongly suggests that, for the implant conditions of this study, the buildup of lattice damage cannot be considered as an accumulation of completely disordered regions. Instead, damage-dose curves are well described by a cascade-overlap model modified to take into account a catastrophic collapse of incompletely disordered regions into an amorphous phase after damage reaches some critical level. Results also show that Bi 2 ions produce more lattice damage than Bi 1 ions implanted to the same dose. The ratio of lattice disorder produced by Bi 2 and Bi 1 ions is 1.7 near the surface, decreases with depth, and finally becomes close to unity in the bulk defect peak region. Parameters of collision cascades obtained using ballistic calculations are in good agreement with experimental data. The molecular effect is attributed to a spatial overlap of ͑relatively dense͒ collision subcascades, which gives rise to ͑i͒ nonlinear energy spike processes and/or ͑ii͒ an increase in the defect clustering efficiency with an effective increase in the density of ion-beam-generated defects.

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Section: Methodsmentioning

confidence: 99%

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

Titov

Kucheyev

Belyakov

et al. 2001

Journal of Applied Physics

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“…16 As reported previously, 12 it appears that point defects (Si interstitials) produced along the range of the implant, which are mobile at room temperature, migrate to and are trapped at the Si/ oxide interface sink, a process first proposed in Ref. 17. The development of a shallow, highly damaged/amorphous layer for these low energy B + implants has been confirmed by spectroscopic ellipsometry (SE) measurements 18 and high resolution RBS/C.…”

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confidence: 50%

Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

Berg

Carter

Armour

et al. 2004

Applied Physics Letters

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Damage distributions resulting from 0.1-2 keV B + implantation at room temperature into Si͑100͒ to doses ranging from 1 ϫ 10 14 to 2 ϫ 10 16 cm −2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For all B + doses and energies investigated a 3 -4 nm deep, near-surface damage peak was observed while for energies at and above 1 keV, a second damage peak developed beyond the mean projected B + ion range of 5.3 nm. This dual damage peak structure is due to dynamic annealing processes. For the near-surface peak it is observed that, at the lowest implant energies and doses used, for which recombination processes are suppressed due to the proximity of the surface capturing interstitials, the value of the damage production yield for low-mass B + ions is equal or greater than the modified Kinchin-Pease model predictions [G.

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Secondary-Emission Methods of Investigating the Structure and Composition of the Surface Layers of Solids

Cited by 2 publications

References 8 publications

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

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