Secondary ion emission from Ti and Si targets induced by medium energy Ar+ ion bombardment – Experiment and computer simulation

Atomic spectrometry update. Atomic mass spectrometry

“…Detailed characterization of the KED of the secondary ions as a function of the target and the extraction voltage was necessary to optimize the energy filter setting in quadrupole SIMS. 181 Monocrystalline Si and Ti as well as polycrystalline Si were bombarded with 20 and 30 keV monoisotopic Ar + ions. The measured KED showed that increasing the extraction voltage broadened the distributions with little increase in the maximum intensity above 80 V for Si + secondary ions whereas the maximum intensity of Ti + secondary ions continued to increase.…”