Secondary ion mass spectrometry and X‐ray photoelectron spectroscopy investigation on chemical vapor deposited CeO2ZrO2TiO2 thin films

Barison, S.; Barreca, Davide; Battiston, Giovanni A.; Daolio, S.; Fabrizio, M.; Gerbasi, R.; Tondello, Eugenio

doi:10.1002/rcm.1014

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…SIMS analyses were performed with a recently updated instrument based on commercial components described in detail elsewhere [38].Sheetresistanceofthe depositedthin filmswas measuredusing a four-point probe. The deposition conditions were varied to obtain the optimum sheet resistance of the thin films, as well as substantial deposition rates.…”

Section: Methodsmentioning

confidence: 99%

A Novel Study of the Growth and Resistivity of Nanocrystalline Pt Films Obtained from Pt(acac)2 in the Presence of Oxygen or Water Vapor

Battiston¹,

Gerbasi²,

Rodríguez

2005

Chem. Vap. Deposition

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d Mass production of millimeter long SWNTs with a very high production yield of SWNTs to catalyst.d Ease of up-scaling by introducing an antenna array (i.e., multiple antennae) for mass production of SWNTs on very large, flat substrates. Unlike other MPCVD, it is unnecessary to consider the geometric and electric boundary conditions. In conclusion, our point-arc MPCVD method is preferable for controlled growth of SWNTs at a low (600 C) temperature on Si substrates coated with a sandwich-like coating structure; Al 2 O 3 (0.5±0.7 nm, top)/Fe (0.5 nm)/ Al 2 O 3 (5±70 nm, bottom) by high frequency, magnetron sputtering. The as-grown SWNT films are extremely dense (66 kg m ±3) and vertically aligned. Despite the slight decrease in the average growth rate (from 340 lm h ±1 in 3 min to 210 lm h ±1 in 2 h), the thickness of SWNTs increases continuously with the growth time, indicating that there is almost no loss of catalyst activity during the long growth period. A film thickness of 420 lm and a very high production yield of 770 000 % were obtained within 2 h. Thus, a promising future for direct applications research using SWNTs prepared on large substrates by our point-arc MPCVD, without further purification, is expected. ExperimentalIn this study, we employed a high frequency, magnetron sputter for the preparation of substrates, and a novel point-arc MPCVD apparatus for the growth of SWNTs, as shown in Figures 5a and b, respectively. All the prepared substrates had a sandwich-like coating structure of 0.5±0.7 nm Al 2 O 3 /0.5 nm Fe/5±70 nm Al 2 O 3 (/Si), see Figure 5a. The Al 2 O 3 was oxidized from the Al coating at room temperature under atmospheric pressure. Reference to the thickness of Al 2 O 3 does not take account of the volume expansion after oxidizing the Al coating.The growth procedure of SWNTs is carried out in the following manner. First, a substrate placed 50 mm away from a tungsten antenna is heated to 600 C by an inductive heater under a chamber pressure of 20 torr, with constant gas flow rates of H 2 (45 sccm) and CH 4 (5 sccm) in a time of 5 min. A spot thermometer (TR-630) is employed to monitor the substrate temperature. Then, a microwave power of 60 W is switched on to start the deposition of SWNTs. The generated point-arc plasma ball (or plasma discharge sphere, about 10 mm in diameter) is concentrated and immobilized on the tip of the tungsten antenna, see Figure 5b. After a few minutes or hours, the microwave plasma and substrate heater are switched off to end the CVD process.All the as-grown samples were observed using FE-SEM (Hitachi S4800). Selected samples were characterized by Raman scattering (Renishaw invia Raman microscopes), and TEM (JEOL 2010). For the preparation of each TEM specimen, a small piece cut from an as-grown SWNT sample was subjected to an ultrasonic pulse for 30 min in a beaker filled with ethanol, then 1±3 drops of the suspension were dropped onto a Cu micro grid.

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Section: Methodsmentioning

confidence: 99%

A Novel Study of the Growth and Resistivity of Nanocrystalline Pt Films Obtained from Pt(acac)2 in the Presence of Oxygen or Water Vapor

Battiston¹,

Gerbasi²,

Rodríguez

2005

Chem. Vap. Deposition

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“…A paper by Barison et al described the chemical vapour deposition of a thin film of this material onto cordierite (the usual material used in mufflers) so that a high surface to volume ratio material was produced. 307 The multilayers of the material were studied using SEM, XPS and SIMS so that the surface and at-depth chemical compositions could be identified. In addition, any film inter-mixing induced by the annealing processes could also be studied.…”

Section: Catalystsmentioning

confidence: 99%

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

Fisher

Goodall

Hinds

et al. 2004

J. Anal. At. Spectrom.

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SIMS Characterization of La0.7Sr0.3MnO3 Films for Solid Oxide Fuel Cell Applications

et al. 2005

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Among solid oxides exploited to prepare efficient fuel cells, La(1-x)SrxMnO3 manganites have been widely studied and used as cathodes, because of their high conductivity at the working temperatures, good thermal stability and compatibility with other cell components. A fundamental goal in solid oxide fuel cells technology consists in lowering the normal operating temperatures, e.g. increasing the surface/volume ratio of electrodic materials, so as to enhance their catalytic performances. In this work, the preparation of high surface area La(1-x)SrxMnO3 (x approximately 0.3) films on silicon wafers by the nitrate-citrate Pechini process is described. The films were characterized by X-ray diffraction, Atomic Force Microscopy and Secondary Ion Mass Spectrometry. Good quality nanostructured perovskite-type films were obtained. SIMS methodology enabled to show the surface and in-depth coatings composition and residual contaminants. Moreover, it allowed defining the best synthesis conditions for complete in-depth decomposition of precursors and obtaining homogeneously thick coatings.

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Secondary ion mass spectrometry and X‐ray photoelectron spectroscopy investigation on chemical vapor deposited CeO₂ZrO₂TiO₂ thin films

Cited by 4 publications

References 21 publications

A Novel Study of the Growth and Resistivity of Nanocrystalline Pt Films Obtained from Pt(acac)2 in the Presence of Oxygen or Water Vapor

A Novel Study of the Growth and Resistivity of Nanocrystalline Pt Films Obtained from Pt(acac)2 in the Presence of Oxygen or Water Vapor

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

SIMS Characterization of La0.7Sr0.3MnO3 Films for Solid Oxide Fuel Cell Applications

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