Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires

Advanced contacts on 3D nanostructured channels for vertical transport gate-all-around transistors

“…Oxidation processes used during VNW-FET fabrication, either to create sacrificial oxide layers or dielectric gate oxides, cause a depletion of the initial doping level as dopants segregate into the formed oxide layer. Recently realized measurements of the dopant concentration of boron doped NWs using high incident Secondary Ion Mass Spectrometry (SIMS) [4] firstly allowed for the precise evaluation of the enhanced dopant segregation and the change of the dopant level in nanostructures as compared to planar samples. The results presented in Fig.…”