Perovskite
solar cells (PSCs) have been fabricated through high-speed
and low-cost depositions but often require long annealing. Intense
pulse light (IPL) can anneal thin films in seconds after deposition
by inducing very high temperatures lasting for milliseconds, and multiple
flashes can be used to tune the temperature profile. In this study,
a gradient flash annealing (GFA) approach is introduced and compared
to uniform flash annealing (UFA) by investigating the crystallinity,
morphology, and phase evolution of the CH3NH3PbI3 perovskite films and their impact on PSC performance.
Unlike UFA, low-intensity pulsed irradiation during the pre-annealing
stage of GFA played a significant role on enhancing the PSC performance
by forming pure-phase CH3NH3PbI3 perovskite
thin films with superior morphology and high crystallinity. To understand
the kinetics, a transient thermal simulation using ANSYS was developed
and confirmed with an experimental setup. The results combined with
microscopy and spectrophotometry were used to visualize how duration,
delay time, photon flux, and flash count parameters participated in
crystallization, phase, and morphology evolution. The IPL annealing
induced rapid surface temperature increase, reaching as high as 800
°C, while produced well-developed and bound perovskite grains
without any surface defects in an uncontrolled ambient environment
with high humidity (>60%). The study resulted in PSCs with maximum
efficiency and fill factor of 9.27 and 69.92% for the UFA and 11.75
and 68% when annealed through the GFA approach, respectively. This
work utilized IPL as the sole thermal source for post-deposition annealing
to rapidly fabricate efficient PSCs in only 10 s, which opens the
pathway for high-speed, low-cost, and large-scale automated fabrication
of perovskite photovoltaics and semiconductors.