The geometry of cationic silicon clusters doped with vanadium, Si n V þ (n ¼ 12-16), is investigated by using infrared multiple photon dissociation of the corresponding rare gas complexes in combination with ab initio calculations. It is shown that the clusters are endohedral cages, and evidence is provided that Si 16 V þ is a fluxional system with a symmetric Frank-Kasper geometry. DOI: 10.1103/PhysRevLett.107.173401 PACS numbers: 36.40.Mr, 33.20.Ea, 61.46.Bc The ongoing trend towards further miniaturization in microelectronics triggers a quest for nanostructured building blocks. Given the importance of silicon in the semiconductor industry, it is straightforward to consider small silicon particles for nanostructuring. The search for silicon building blocks was initiated in the 1990s and revealed strong size dependencies and cluster geometries that do not correspond to bulk fragments [1]. Unfortunately, elemental silicon clusters have dangling bonds, which renders them chemically reactive and therefore not suitable as nanoscale building blocks [2]. In contrast to carbon, silicon prefers the formation of bonds through sp 3 hybridization, resulting in three-dimensional structures [3]. Ion mobility studies demonstrated that silicon structures follow a prolate growth sequence and no fullerenelike caged particles are formed [4,5]. However, incorporating a metal atom or hydrogenation can saturate the dangling bonds and induce the formation of caged silicon clusters [3,6,7].Theoretical investigations of doped silicon clusters have considered dopants from almost every group of the periodic table [6]. Most interestingly, it is predicted that transition-metal atoms possibly stabilize the clusters and induce the formation of symmetric endohedral cages with the dopant atom at the center of the cage, which is of relevance for novel silicon based nanostructured devices [8][9][10][11][12]. For example, fullerenelike cages and Frank-Kasper (FK) polyhedrons, which are tetrahedrally close-packed structures containing interpenetrating polyhedra with coordination numbers 12, 14, 15, or 16 [13], are predicted for Ti and V doped silicon clusters with at least 12 Si atoms [10,14,15]. However, if there are insufficient Si atoms to fully enclose the dopant atom, basketlike structures are formed [11]. Although mass spectrometry and photodissociation experiments [8,[16][17][18][19] show an enhanced stability of specific transition-metal doped silicon clusters, no single experiment has yet provided detailed information on their structure. Up to now, mainly indirect evidence is found for the formation of symmetric species by photoelectron and x-ray spectroscopy studies [20][21][22] and chemical probe methods [20,23].In this Letter, the structure of size selected endohedrally doped silicon clusters is obtained by combining experimental infrared multiple photon dissociation (IR-MPD) spectroscopy with quantum chemical calculations. It will be shown that the V dopant atom in the cationic Si n V þ (n ¼ 12-16) clusters locates at the center ...