2020 IEEE International Electron Devices Meeting (IEDM) 2020
DOI: 10.1109/iedm13553.2020.9372073
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Secure 3D CMOS Chip Stacks with Backside Buried Metal Power Delivery Networks for Distributed Decoupling Capacitance

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“…Figure 10 depicts a 3D secure packaging structure. 34,35) All IO pads of each chip are vertically connected to the BBM of the upper tier formed on the backside of the chip via through-silicon vias and microbumps. The BBM also forms a power and ground wiring network; thus, a MOS capacitance is formed between the BBM and the Si substrate via SiO 2 .…”
Section: Detection Of Si-backside Attacksmentioning
confidence: 99%
“…Figure 10 depicts a 3D secure packaging structure. 34,35) All IO pads of each chip are vertically connected to the BBM of the upper tier formed on the backside of the chip via through-silicon vias and microbumps. The BBM also forms a power and ground wiring network; thus, a MOS capacitance is formed between the BBM and the Si substrate via SiO 2 .…”
Section: Detection Of Si-backside Attacksmentioning
confidence: 99%