SEE and TID characterization of an 8 Gbps SST transmitter in a 28 nm bulk CMOS technology

Liang, Bin; Chen, Jianjun; Chi, Yaqing; Yuan, Hengzhou; Wen, Yumei; Yao, Xia; Sun, H.

doi:10.1016/j.microrel.2023.114909

Cited by 2 publications

(1 citation statement)

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“…While extensive research has been published on the total dose effects and displacement effects of InP HBT and circuits [8][9][10][11][12], this paper focuses specifically on the investigation of single-event effects (SEEs). Currently, most of the research concentrates on the SEEs and hardened methods for SiGe HBTs and Si-based CMOS circuits [13][14][15][16][17][18][19], with limited research on SEEs of InP-based circuits. For instance, T. R. Weatherford et al simulated the SEEs of InP HBTs in emitter-coupled logic circuits and analyzed the influence of the lifetime of buffer layer materials on SEEs [20].…”

Section: Introductionmentioning

confidence: 99%

The Study on Single-Event Effects and Hardening Analysis of Frequency Divider Circuits Based on InP HBT Process

Zhao,

Su,

Chen

et al. 2024

Micromachines

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The single-event effects (SEEs) of frequency divider circuits and the radiation tolerance of the hardened circuit are studied in this paper. Based on the experimental results of SEEs in InP HBTs, a transient current model for sensitive transistors is established, taking into account the influence of factors such as laser energy, base-collector junction voltage, and radiation position. Moreover, the SEEs of the (2:1) static frequency divider circuit with the InP DHBT process are simulated under different laser energies by adding the transient current model at sensitive nodes. The effect of the time relationship between the pulsed laser and clock signal are discussed. Changes in differential output voltage and the degradation mechanism of unhardened circuits are analyzed, which are mainly attributed to the cross-coupling effect between the transistors in the differential pair. Furthermore, the inverted output is directly connected to the input, leading to a feedback loop and causing significant logic upsets. Finally, an effective hardened method is proposed to provide redundancy and mitigate the impacts of SEEs on the divider. The simulation results demonstrate a notable improvement in the radiation tolerance of the divider.

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