1972
DOI: 10.1016/0022-3093(72)90154-8
|View full text |Cite
|
Sign up to set email alerts
|

Seebeck coefficient in amorphous chalcogenide films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
4
0

Year Published

1973
1973
2014
2014

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 40 publications
(4 citation statements)
references
References 2 publications
0
4
0
Order By: Relevance
“…Temperature dependences of S for all samples indicate that metal-insulator transitions (MIT) takes place because the slope changes from negative (metallic similarly as expected for degenerate semiconductors [33]) to positive (semiconducting). As it is seen in Fig.…”
Section: Resultsmentioning
confidence: 95%
“…Temperature dependences of S for all samples indicate that metal-insulator transitions (MIT) takes place because the slope changes from negative (metallic similarly as expected for degenerate semiconductors [33]) to positive (semiconducting). As it is seen in Fig.…”
Section: Resultsmentioning
confidence: 95%
“…These features constitute convincing evidence that the electrical transport processes in the two materials feature essentially unipolar conduction by hole carriers. Such a conclusion is supported by other data on the materials such as the thermopower (Rockstad, Flasck andIwasa 1972, Nagels, Callaerts andDenayer 1974), and by the fact that holes have been identified as the dominant carrier in all disordered chalcogenides for which time-offlight mobility measurements have been performed. It should be noted that the dominance of hole carriers in the transport processes does not imply that the trapped electron density is negligible, but only that the free electrons make little contribution to the conduction mechanisms.…”
mentioning
confidence: 50%
“…In some materials, DE r was found to be equal to DE s , which has been interpreted in terms of holes conduction in the extended states. In other materials, DE r was found to be larger than DE s [47][48][49][50]. This result may be accounted for either with an intrinsic two carriers model [51] or with conduction by hopping in the valence band with an activation energy for the mobility equal to DE r -DE s [24,[48][49][50][51][52].…”
Section: Thermoelectric Powermentioning
confidence: 99%