Seebeck Coefficient of Ultrathin Silicon-on-Insulator Layers

Salleh, Faiz; Asai, Kiyosumi; Ishida, Akihiro; Ikeda, Hiroya

doi:10.1143/apex.2.071203

Cited by 40 publications

(34 citation statements)

References 12 publications

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“…This result is consistent with a previous study [9,11], in which the contribution of phonons to the Seebeck coefficient of Ge in the carrier concentration range from 10 14 -10 18 cm -3 above 250 K was found to be almost zero. In contrast, the phonondrag effect is usually observed in Si, even at a room temperature [7,.…”

Section: Resultsmentioning

confidence: 91%

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Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

Veerappan¹,

Yoshida²,

Suzuki³

et al. 2015

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In order to build high-sensitivity infrared photodetectors using SiGe nanowires, we investigate the thermoelectric characteristics of Ge-on-insulator (GOI) layers as a reference for SiGe. We fabricate p-type GOI substrates with an impurity concentration of 10 16 -10 18 cm -3 by a wafer-bonding process using Ge and oxidized Si wafers. Annealing treatment is performed in order to further increase the bonding strength of Ge/SiO 2 interface. We measure the Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is very close to the theoretical value for Ge, calculated on the basis of carrier transport. Hence, there is a small phonon-drag effect in GOI. On the other hand, the effect of phonon drag on the Seebeck coefficient of Si is usually significant. These results likely stem from the differences between phonon velocity, phonon mean-free-path, and hole mobility between Ge and Si. AbstrakKontribusi Tarikan Fonon terhadap Koefisien Seebeck Substrat Ge-On-Insulator yang Difabrikasi dengan Proses Pengikatan Wafer. Untuk membuat sebuah fotodetektor infra merah bersensitivitas tinggi dengan kawat-kawat nano SiGe, kami menyelidiki ciri-ciri termoelektrik dari lapisan-lapisan Ge-on-insulator (GOI) sebagai rujukan untuk SiGe. Kami memfabrikasi substrat-substrat GOI tipe-p dengan konsentrasi impuritas sebesar 10 16 -10 18 cm -3 melalui proses pengikatan wafer menggunakan wafer-wafer Ge dan Si yang teroksidasi. Perlakuan aniling diterapkan untuk semakin menambah kekuatan ikat antarmuka Ge/SiO 2 . Kami mengukur koefisien Seeback pada rentangan suhu 290-350 K. Koefisien Seebeck dari lapisan-lapisan GOI itu nyaris serupa dengan angka teoretis untuk Ge yang diperhitungkan berdasarkan transpor pembawa. Jadi, terdapat efek tarikan fonon kecil pada GOI. Di pihak lain, efek tarikan fonon pada koefisien Seebeck Si umumnya terjadi secara signifikan. Hasil yang demikian mungkin diakibatkan oleh perbedaan antara kecepatan fonon, jalur bebas purata fonon, dan mobilitas lubang antara Ge dan Si.

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Section: Resultsmentioning

confidence: 91%

“…Seebeck coefficient was determined from the TEMF (∆V=V H -V L ) and the temperature difference (∆T=T H -T L ) via the equation S = -∆V/∆T over the range of temperature of 290-350 K [7]. The Hall measurements to determine the electrical resistivity, mobility, and carrier concentration were performed at a room temperature.…”

Section: Methodsmentioning

confidence: 99%

Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

Veerappan¹,

Yoshida²,

Suzuki³

et al. 2015

MST

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“…The performance of thermoelectric devices is gauged by the dimensionless thermoelectric figure of merit ZT ¼ (S 2 sk À 1 )T; where S, s, k and T are the Seebeck coefficient, electrical conductivity, thermal conductivity and temperature, respectively. While Si-based semiconductors typically have very favourable power factors (S 2 s) [2][3][4] , making them attractive for chip cooling and scavenging applications, their large phonondominated k has prevented their use in TE systems. One approach is to use porosity to scatter phonons and hence reduce their contribution to k 5,6 .…”

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Thermal transport in phononic crystals and the observation of coherent phonon scattering at room temperature

et al. 2015

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“…3 as a function of the carrier concentration. In this figure, the previously measured S of SOI layers are also shown [9,10]. The numbers adjacent to the filled circles indicate the SOI layer thickness.…”

Section: Resultsmentioning

confidence: 99%

“…In this figure, the scanning electron microscope (SEM) image shows the partial array of 10 Si wires. The S was measured using the same method as used in our previous study [9,10]. The time evolution of the TEMF was measured simultaneously with the temperature at high-and low-temperature regions in the sample.…”

Section: Methodsmentioning

confidence: 99%

Seebeck Coefficient of SOI Layer Induced by Phonon Transport

Salleh¹,

Oda²,

Suzuki³

et al. 2015

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The Seebeck coefficient of a patterned Si wire on P-doped SOI (Si-on-insulator) layer with a carrier concentration of 10 18 cm -3 was measured near room temperature. The Seebeck coefficient is found to be smaller than that in the SOI layer and to be closer to the calculated Seebeck coefficient including the electronic contribution. The decrease in the Seebeck coefficient of Si wire is likely to occur due to the elimination of the contribution of phonon drag part. From the theoretical calculation of scattering rates by considering the scattering processes in phonon system, it is considered that an increase in phonon-boundary scattering and simultaneously a decrease at the cross section of SOI layer are likely responsible for eliminating the phonon drag effect. AbstrakKoefisien Seebeck Lapisan SOI yang Diinduksi oleh Transpor Phonon. Koefisien Seebeck pada kawat Si berpola pada lapisan SOI bersalut-P dengan konsentrasi pembawa sebesar 10 18 cm -3 diukur pada suhu mendekati suhu kamar. Ditemukan bahwa koefisien Seebeck-nya lebih kecil daripada koefisien Seebeck pada lapisan SOI dan lebih dekat pada koefisien Seebeck yang telah diperhitungkan, termasuk kontribusi elektroniknya. Penurunan koefisien Seebeck pada kawat Si mungkin terjadi akibat hilangnya kontribusi bagian tarikan fonon. Dari perhitungan teoretis terhadap rasiorasio pengacakan yang dilakukan dengan memperhitungkan proses-proses pengacakan di dalam sistem fonon, dapat disimpulkan bahwa kenaikan pengacakan batas-fonon dan penurunan yang terjadi pada bagian simpang dari lapisan SOI secara simultan mungkin menjadi penyebab menghilangnya efek tarikan fonon.

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Seebeck Coefficient of Ultrathin Silicon-on-Insulator Layers

Cited by 40 publications

References 12 publications

Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

Thermal transport in phononic crystals and the observation of coherent phonon scattering at room temperature

Seebeck Coefficient of SOI Layer Induced by Phonon Transport

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