Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe
            <sub>2</sub>

Xu, Xiaolong; Pan, Yu; Liu, Shuai; Han, Bo; Gu, Pingfan; Li, Siheng; Xu, Wanjin; Peng, Yuxuan; Han, Zheng; Chen, Ji; Gao, Peng; Ye, Yu

doi:10.1126/science.abf5825

Cited by 200 publications

(203 citation statements)

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“…[90] MoTe 2 films with mono-orientation were reported through a physical COP method. [129] However, there are few reports on using the GID method for the successful growth of wafer-scale singlecrystalline TMDCs films. Largest monolayer TMDC crystals (MoS 2 , [149] MoSe 2 , [150] WS 2 , [151] WSe 2 [152] ) by GID route are only in submillimeter scale.…”

Section: Conclusion and Perspectivementioning

confidence: 99%

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Growth of 2D Materials at the Wafer Scale

Guo

Kim

et al. 2022

Advanced Materials

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der Waals (vdW) layered 2D materials are regarded as a very promising new material system to support postsilicon IC technologies because of their rich and excellent physical properties even with thickness at the atomic scale (<1 nm). [1][2][3] It has been reported that monolayer MoS 2 as a transistor channel can be effectively controlled using 1 nm length carbon nanotube gating. Electric field control on such a short channel can achieve MoS 2 transistors with excellent performance, including an on/off current ratio up to 10 6 and a subthreshold swing (SS) of 65 mV s −1 . [4] This indicates that 2D vdW semiconductors are promising candidates to replace silicon for continued downscaling.Many vdW layered 2D materials have been synthesized and explored since the graphene discovery in 2004. They include highly conductive graphene [1] and MXenes (atomic-thin transition metal carbides and nitrides), [5] transition metal chalcogenides (TMDCs, including both metallic [6] and semiconducting [2] ), 2D elemental semiconductors (black phosphorus (BP), [7] tellurium (Te) [8] ), 2D insulators (e.g., hexagonal boron nitride (h-BN) [9] and some oxides). [10] The large variety of vdW layered 2D materials provides a large potential for advanced 2D electronics.However, for scalable applications, all vdW layered 2D materials face a common challenge: transitioning from micrometer-scale 2D flakes to wafer-scale. [1,2,[11][12][13] This is necessary for scaling up 2D vdW materials application in the high-end semiconductor industry. The history of silicon wafer development and its significant impact on modern information technologies has already demonstrated the importance of a large wafer size for volume production at an acceptable cost. Some materials, such as graphene, [14] h-BN, [15] and TMDCs, [16] have been heavily explored for wafer-scale growth, but the reality is that wafer-scale film quality still has enormous space to improve, especially when compared to chip-grade single-crystalline silicon. Other materials such as MXenes, BP, Te, and vdW oxides, have only a few reported papers focusing on their wafer-scale growth. Hence, we feel that this timely review focusing on wafer-scale growth methods of relevant 2D vdW layered materials is urgently needed.The scope of this review is clarified in Figure 1, where the structures, properties, wafer-scale growth methods, and applications of representative vdW layered 2D materials. We begin by briefly introducing these 2D vdW layered materials and discuss Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a sign...

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Section: Conclusion and Perspectivementioning

confidence: 99%

mentioning

confidence: 99%

Growth of 2D Materials at the Wafer Scale

Guo

Kim

et al. 2022

Advanced Materials

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“…Among the various methods for synthesizing 2D materials, CVD method has been successful used in large‐scale fabrication of several representative 2D materials, such as graphene, hexagonal boron nitride (h‐BN), and TMDCs. [ 43–45,54–57 ] For the growth of graphene and h‐BN, metals like Cu and Ni, are often used as promising catalyst, epitaxial substrate, or dissolution source of the reaction atoms. [ 46,47 ] For the growth of TMDCs, precursors like transition metals (e.g., Mo, W, Pt, etc.…”

Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning

confidence: 99%

Perspectives of 2D Materials for Optoelectronic Integration

Zhao

Zhang

et al. 2021

Adv Funct Materials

122

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2D materials show wide-ranging physical properties with their electronic bandgaps varying from zero to several electronvolts, offering a rich platform to explore novel electronic and optoelectronic functions. Notably, atomically thin 2D materials are well suited for integration in optoelectronic circuits, because of their ultrathin body, strong light-matter interactions, and compatibility with the current silicon photonic technology. In this paper, an overview of the state of the art of using 2D materials in optoelectronic devices and integration is provided. The optoelectronic properties of 2D materials and their typical electronic and optoelectronic applications including light sources, optical modulators, photodetectors, field-effect transistors, and logic circuits are summarized. The device configurations, operation mechanisms, and device figures-of-merit are introduced and discussed. By discussing the recent advances, future trends, and existing challenges of 2D materials and their optoelectronic devices, this review has provided an insight into the perspectives of 2D materials for optoelectronic integration and may guide the development of this field within the research community.

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“… Wafer-scale growth of 2D TMDC single crystals. The synthesis of large-area TMDC single crystals with unprecedented crystallinity, electrical quality, and wafer-scale uniformity is the ultimate target that will eventually pave the way for 2D TMDC-based electronics ( Li et al, 2021 ; Xu et al, 2021 ). Molten salts such as Na 2 Mo 2 O 7 had been used to achieve ledge-induced epitaxial growth of 1D MoS 2 nanoribbons along with the surface steps of NaCl crystals.…”

Section: Perspectivementioning

confidence: 99%

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Li¹

2021

iScience

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Summary Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na 2 MoO 4 , Na 2 WO 4 , etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

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Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe ₂

Cited by 200 publications

References 50 publications

Growth of 2D Materials at the Wafer Scale

Growth of 2D Materials at the Wafer Scale

Perspectives of 2D Materials for Optoelectronic Integration

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

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Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe 2

Cited by 200 publications

References 50 publications

Growth of 2D Materials at the Wafer Scale

Growth of 2D Materials at the Wafer Scale

Perspectives of 2D Materials for Optoelectronic Integration

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

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Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe ₂