Seeded growth of AlN bulk single crystals by sublimation

Schlesser, R.; Dalmau, Rafael; Sitar, Zlatko

doi:10.1016/s0022-0248(02)01319-2

Cited by 130 publications

(122 citation statements)

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“…There have been several attempts to grow bulk AlN crystals via techniques such as sublimation-recondensation [1][2][3] and solution growth [4]. However, it is quite difficult to expand the size of AlN crystal by these methods.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl 3 and NH 3 was performed. Regardless of the carrier gas used, partial pressures of Al-containing gaseous species [AlCl 3 , AlCl 2 , AlCl and (AlCl 3 ) 2 ] in equilibrium with AlN are significantly low in the temperature range of 500 -1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (∆P Al ) becomes almost equal to the input partial pressure of AlCl 3 , which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled.

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Section: Introductionmentioning

confidence: 99%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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“…14) In addition, AlN single crystals with needle or whisker shapes are used as seed crystals in the growth of largesized AlN single crystals, 15) has been studied. The direct nitridation of Al is a simple process for obtaining large-sized AlN crystals at relatively low temperatures.…”

Section: )9)mentioning

confidence: 99%

“…AlN single crystals have been used in substrates and buffer layers in the growth process of GaN and AlGaN. 10)13) AlN also has attracted attention for use in widebandgap devices such as a deep ultraviolet light-emitting diode (UV-LEDs).14) In addition, AlN single crystals with needle or whisker shapes are used as seed crystals in the growth of largesized AlN single crystals, 15) has been studied. The direct nitridation of Al is a simple process for obtaining large-sized AlN crystals at relatively low temperatures.…”

mentioning

confidence: 99%

“…10)13) AlN also has attracted attention for use in widebandgap devices such as a deep ultraviolet light-emitting diode (UV-LEDs). 14) In addition, AlN single crystals with needle or whisker shapes are used as seed crystals in the growth of largesized AlN single crystals, 15) thermal conductive fillers, 16) and composite reinforcement materials. 17) The growth of AlN single crystals by the sublimation of AlN powders, 18), 19) direct nitridation of Al in N 2 atmosphere, 20) carbothermal reduction nitridation (CRN) of Al 2 O 3 , 21), 22) and hydride vapor physical transportation using AlCl 3 and NH 3 23), 24) has been studied.…”

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confidence: 99%

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Synthesis of AlN needles by nitridation of Al–Si melt

Kobayashi

Fukutomi

Takagi

2016

J. Ceram. Soc. Japan

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Needle-like single crystals of aluminum nitride (AlN) were synthesized by the direct nitridation of an AlSi binary melt. The growth behavior and shape of the needles were changed by varying the Al:Si ratio. With lower Al content, needles with high aspect ratio (>20) preferentially grew on the AlSi melt and crucible wall. With increasing Al content, needles with lower aspect ratios having various shapes such as ribbon-like and bended shapes tended to grow. The longer directions of the needles could mainly correspond to the c-axis of a wurtzite-type AlN.©2016 The Ceramic Society of Japan. All rights reserved.Key-words : Aluminum nitride, Whisker, Growth from melt, Single crystal [Received May 26, 2016; Accepted August 5, 2016] Aluminum nitride (AlN) has high refractoriness, high hardness, high thermal conductivity, good corrosion resistance, and good insulation property. 1),2) AlN ceramics have been widely used as substrates and structural components for semiconductor devices and manufacturing. AlN is a typical sintering-resistant material; therefore, high-temperature sintering with sintering additives is necessary to obtain dense AlN samples. Rare-earth and alkaliearth oxides such as Y 2 O 3 and CaO have been found to be effective for developing dense AlN ceramics with high thermal conductivity. 3)9)The growth of AlN single crystals and thin films is another important area of research. AlN single crystals have been used in substrates and buffer layers in the growth process of GaN and AlGaN. 10)13) AlN also has attracted attention for use in widebandgap devices such as a deep ultraviolet light-emitting diode (UV-LEDs).14) In addition, AlN single crystals with needle or whisker shapes are used as seed crystals in the growth of largesized AlN single crystals, 15) has been studied. The direct nitridation of Al is a simple process for obtaining large-sized AlN crystals at relatively low temperatures. In this process, the crystal tends to have a needle-like shape from 1800 to 1900°C and a platelet-like shape at higher temperatures. 20) However, the low melting point (660°C) and high heat of nitridation (¦H 298K = ¹318 kJ mol ¹1, as calculated using the FACT-Web program) of Al often make the evaporation and nitridation rate of Al uncontrollable; this limits the ability to control the morphology of AlN crystals by the growth temperature alone. One of the solutions to this problem is to use a binary melt containing Al 25) instead of a pure Al melt. Si has a much higher melting point (1414°C) and lower heat of nitridation (¦H 298K = ¹246 kJ mol ¹1 , as calculated using the FACT-Web program) than Al. Therefore, the morphology of AlN can be controlled by changing the Al:Si ratio in the AlSi melt. In this study, we synthesized needle-like AlN crystals by the direct nitridation of an AlSi binary melt with various Al:Si ratios.Commercially available Al powder (Rare Metallic Co., Ltd., 99.9%) and Si powder (Rare Metallic Co., Ltd., 99.9%) were used for raw powders. These powders were weighted with Al:Si molar ratios of 1:3, ...

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“…However, progress regarding the growth of AlN crystals 1 and the fabrication of GaN-based devices from heterostructures grown on these substrates has been reported. 2 Extensive processing of bulk semiconductor crystals into polished wafers and the exposure of the latter to the ambient usually leaves the surfaces contaminated with species derived from one or more of the chemicals employed as well as various hydrocarbons, a native oxide, and an associated hydroxide.…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001)

Mecouch

Wagner

Reitmeier

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In situ exposure of the (0001) surface of AlN thin films to flowing ammonia at 1120°C and 10 −4 Torr removes oxygen/hydroxide and hydrocarbon species below the detectable limits of x-ray photoelectron spectroscopy and decreases the Al/N ratio from 1.3 to 1.0. The positions of the Al 2p and the N 1s core level peaks acquired from the cleaned surfaces were 75.0± 0.1 eV and 398.2± 0.1 eV, respectively, which were similar to the values determined for the as-loaded samples. The cleaning process left unchanged the ͑1 ϫ 1͒ low energy electron diffraction pattern, the step-and-terrace microstructure, and the root mean square roughness values observed for the surfaces of the as-loaded samples; i.e., the surface structure and microstructure were not changed by the high-temperature exposure to ammonia at low pressures. Vacuum annealing under 10 −7 Torr at 1175°C for 15 min removed all detectable hydrocarbons; however, it did not remove the oxygen/ hydroxide species.

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Seeded growth of AlN bulk single crystals by sublimation

Cited by 130 publications

References 14 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Synthesis of AlN needles by nitridation of Al–Si melt

Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001)

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Seeded growth of AlN bulk single crystals by sublimation

Cited by 130 publications

References 14 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Synthesis of AlN needles by nitridation of Al&ndash;Si melt

Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001)

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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Synthesis of AlN needles by nitridation of Al–Si melt