SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

Abstract

Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator (DSPSOI) layers. Results show that the safety operation area (SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs.

The impact of heavy ion irradiation on the performance of novel REDI LDMOS power devices

“…With the deepening of space exploration, electronic systems working in the harsh radiation environment increase, and the radiation effect of power devices aroused great interests [4][5][6][7][8]. Zebrev et al [9] investigated the performance degradation of commercial N-type trench power MOSFET induced by micro-dose effect.…”