Segregation and desorption of antimony in InP (001) in MOVPE

Weeke, S.; Leyer, Martin; Pristovsek, Markus; Brunner, F.; Weyers, M.; Richter, Wolfgang

doi:10.1016/j.jcrysgro.2006.10.213

Cited by 11 publications

(5 citation statements)

References 12 publications

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“…These experiments were carried out on different samples prepared under different conditions and growth methods (namely MBE and MOCVD), and after preparation of the deposited layer, different techniques were then employed to avoid surface contamination. 16,17,[48][49][50] Nevertheless, and in spite of some uncertainty in the baseline position, it is clear that the spectra are all very similar. Hence, the resulting phase is likely to be the same Sb-stabilized phase.…”

Section: Surface Optical Spectramentioning

confidence: 99%

Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions

Hogan

Magri

Sole³

2011

Phys. Rev. B

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The structure of the technologically important-but still mostly unknown-GaSb(001)-c(2 x 6) surface reconstruction is investigated by means of ab initio simulations of reflectance anisotropy spectroscopy (RAS) and total energy calculations. A large number of reconstruction models for the GaSb(001) surface in the Sb-rich coverage regime are considered. The influence of each single surface structural motif on the RAS spectra is studied in detail, as well as their role in the surface stability with regard to application of the electron counting rule (ECR). We interpret the features of the RAS data measured for this reconstruction and suggest a new model for the c(2 x 6) phase. In this model a few Sb atoms in the second layer are randomly substituted by Ga, forming surface antisite defects. When used to fulfill the ECR, this "doping" effect considerably lowers the total energy of the long chain c(2 x 6) reconstruction model, making it competitive with the more stable short-chain (4 x 3) reconstructions. Formation of the surface antisites occurs spontaneously in the presence of dynamical negative charge fluctuations and is favored by the excellent matching between GaSb(001) and metallic Sb and by the natural softness of the Ga-Sb bonds. Calculations of the reflectance anisotropy spectra confirm that this structure is a major component of a largely disordered surface, where motifs of the stable (4 x 3) reconstructions are also present

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Section: Surface Optical Spectramentioning

confidence: 99%

Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions

Hogan

Magri

Sole³

2011

Phys. Rev. B

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“…One is the slight incorporation of Sb in the InP emitter. This is probably due to Sb (surface) segregation [24][25][26][27] and memory effects. An appropriate growth interval process in an As-rich atmosphere before the growth of InP 24,25) and=or the insertion of a GaAs interlayer 28) between the base and the InP emitter might be effective for suppressing this segregation.…”

Section: Sims Analysis and Contact Resistivity Of Compositionally-gra...mentioning

confidence: 99%

Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

Hoshi

Kashio

Sugiyama

et al. 2017

Jpn. J. Appl. Phys.

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We report on a method for composition and doping control for metalorganic chemical vapor deposition of a double heterojunction bipolar transistor (DHBT) with a hybrid base structure consisting of a compositionally graded InGaAsSb for boosting an average electron velocity and a heavily doped thin GaAsSb for lowering the base contact resistivity. The GaAsSb contact layer can be formed by simply turning off the supply of In precursor tetramethylindium (TMIn) after the growth of the composition and doping graded InGaAsSb base. Consequently, the solid composition and hole concentration of hybrid base can be properly controlled by just modulating the supply of only TMIn and carbon tetrabromide. Secondary ion mass spectroscopy for the DHBT wafer reveals that the contents of In, Ga, and C inside the base are actually modulated from the collector side to the emitter side as expected. Transmission-line-model measurements were performed for the compositionally graded-InGaAsSb/GaAsSb hybrid base. The contact resistivity is estimated to be 5.3 Ω µm2, which is lower than half the value of a compositionally graded InGaAsSb base without the GaAsSb contact layer. The results indicate that the compositionally-graded-InGaAsSb/GaAsSb-contact hybrid base structure grown by this simple method is very advantageous for obtaining DHBTs with a very high maximum oscillation frequency.

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“…During the growth of GaAsSb layer, Sb tends to segregate and incorporate into the InP emitter, resulting in a bumpy interface and degraded device performance such as a low current gain as well as a large base current ideality factor [8,9]. Moreover, Arsenic carryover and/or P/As exchange could also occur at this particular interface [10,11]. Therefore, design and growth of high-quality emitter-base junction is of critical importance to a high-performance InP/GaAsSb/InP DHBT.…”

Section: Introductionmentioning

confidence: 99%

Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD

Liu,

Zhu,

Deng

et al. 2024

Phys. Scr.

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Effect of spacer layer design between InP emitter and GaAsSb base in InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) grown by MOCVD was investigated. A very thin tensile-strained GaAs layer, or a thin GaInP layer, or combination of both was inserted between InP emitter and GaAsSb base to mitigate Sb segregation and/or eliminate electron pile-up between emitter and base. With a base sheet resistances of ~ 1800 ohm/sq for all devices, DHBTs with a GaAs spacer, a GaInP spacer and the combination demonstrate a current gain of 24, 49 and 64, respectively. The conduct band discontinuity ΔEc at InP/GaAsSb interfaces and the current blocking effect are effectively eliminated by employing the combination of GaAs and GaInP layers.

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Segregation and desorption of antimony in InP (001) in MOVPE

Cited by 11 publications

References 12 publications

Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions

Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions

Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD

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