Segregation of Mn<sup>2+</sup>Dopants as Interstitials in SrTiO<sub>3</sub>Grain Boundaries

Yang, Hao; Kotula, Paul Gabriel; Satô, Yukio; Chi, Miaofang; Ikuhara, Yuichi; Browning, Nigel D.

doi:10.1080/21663831.2013.856815

Cited by 17 publications

(24 citation statements)

References 24 publications

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“…This "beam damage" is an especially limiting factor for imaging of biological samples, 3,4 soft and sensitive materials, 5,6 in-situ imaging under environmental conditions, 7,8 and imaging that requires multiple or long acquisitions, such as 3D tomography, 9,10 ptychography, 11 or spectroscopic mapping. 12 Although relatively new to mainstream S/TEM applications in inorganic materials, the issue of electron "beam damage" has been a long-standing problem in the biological sciences, and there have been various strategies developed to keep it at a minimal level. Some of these strategies involve choosing the electron beam energy in order to minimize the primary beam damage mechanism 13 or utilizing methods that rely on the minimization of preexposure or fractionation of the electron dose.…”

mentioning

confidence: 99%

Implementing an accurate and rapid sparse sampling approach for low-dose atomic resolution STEM imaging

Kovařík

Stevens

Liyu

et al. 2016

Applied Physics Letters

110

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While aberration correction for scanning transmission electron microscopes (STEMs) dramatically increased the spatial resolution obtainable in the images of materials that are stable under the electron beam, the practical resolution of many STEM images is now limited by the sample stability rather than the microscope. To extract physical information from the images of beam sensitive materials, it is becoming clear that there is a critical dose/dose-rate below which the images can be interpreted as representative of the pristine material, while above it the observation is dominated by beam effects. Here, we describe an experimental approach for sparse sampling in the STEM and in-painting image reconstruction in order to reduce the electron dose/dose-rate to the sample during imaging. By characterizing the induction limited rise-time and hysteresis in the scan coils, we show that a sparse line-hopping approach to scan randomization can be implemented that optimizes both the speed of the scan and the amount of the sample that needs to be illuminated by the beam. The dose and acquisition time for the sparse sampling is shown to be effectively decreased by at least a factor of 5× relative to conventional acquisition, permitting imaging of beam sensitive materials to be obtained without changing the microscope operating parameters. The use of sparse line-hopping scan to acquire STEM images is demonstrated with atomic resolution aberration corrected the Z-contrast images of CaCO3, a material that is traditionally difficult to image by TEM/STEM because of dosage issues.

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mentioning

confidence: 99%

Implementing an accurate and rapid sparse sampling approach for low-dose atomic resolution STEM imaging

Kovařík

Stevens

Liyu

et al. 2016

Applied Physics Letters

110

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“…The decreasing electron doping defect could be due to Fe ionic interstitial defects in the crystalline structure of FeY‐TZP specimens. The oxygen vacancy of 3Y‐TZP induced by Y 2 O 3 dopant results in electron localization on the Fe cation, likely leading to Fe 3+ to Fe 2+ 25,28, 30,31,48–51 …”

Section: Discussionmentioning

confidence: 99%

“…The property optimization and understanding in thermodynamics of both multielement‐doped zirconia and HEFOs are in the single frame of ionic substitution 2,13,16,17 . In fact, dopant occupancy location exerts great effects to the derived performances of metals, thermoelectric materials and some transition metal oxides doped oxides 25–32 . To move forward these complex materials, it is important to clarify the relationship between preparation and the corresponding defect chemistry, and thermophysical properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of doping location induced anisotropy on thermophysical properties of dilute Fe₂O₃‐Y₂O₃‐ZrO₂ solid solutions

et al. 2021

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Multi‐element doped zirconia ceramics are of interest as a satisfactory balance in low thermal conductivity, phase stability, and particularly fracture resistance dominated by non‐transformable tetragonal prime phase (t′) for the next generation thermal barrier coatings and catalysis supports. Compared with mass and radius of dopants, dopant location is rarely investigated due to the high complexity. The undersized transition metal oxides (Fe, Co, and Ni) within 2.0 mol% content were selected for doping 3Y‐TZP to improve thermophysical properties by distinctive doping locations. As shown by X‐ray diffraction and Raman spectra, the Fe3+/Fe2+ ions occupied both substitution and interstitial sites simultaneously, which significantly increased tetragonality and local anisotropy of FeY‐TZP polycrystal. The t′ phase transformation mechanism of the FeY‐TZP compounds quantitatively discussed regarding the coercive strain and stress. In opposition to prediction by Kopp's law, the coefficient of thermal expansion and specific heat capacity of the FeY‐TZP compounds unusally decreased, and the maximum reduction of −83% and −22.5% occured in the 1.0 mol% Fe doping. Cp‐T dependency of the specimens above 550 K strongly related with lattice anisotropy in addition to t′ phase content. Thermomechanical properties of the multicomponent zirconia are highly tunable with dopant locations, supplying a novel landscape for designing high‐entropy ceramics.

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“…Dopant segregation at surfaces and grain boundaries in STO and other perovskites has been studied in the past, wherein dopants that have different charge states and ionic radii as compared to the host cations tend to segregate to grain boundaries and surfaces to reduce the total energy of the system. At semi‐coherent oxide heterointerfaces, in addition to the size and charge mismatch, an extra degree of complexity emerges in the form of misfit dislocations and the associated strain, which is typically longer ranged than for surfaces and high‐angle grain boundaries.…”

Section: Discussionmentioning

confidence: 99%

Influence of Chemistry and Misfit Dislocation Structure on Dopant Segregation at Complex Oxide Heterointerfaces

Dholabhai

Martínez

Uberuaga

2018

Advcd Theory and Sims

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Complex oxide heterostructures and thin films have emerged as promising candidates for diverse applications. Lattice mismatch between the two oxides lead to the formation of misfit dislocations, which influence vital material features. Trivalent dopant segregation to misfit dislocations at semi-coherent oxide heterointerfaces, while not well understood, is anticipated to impact interface-governed properties. Here, atomistic simulations elucidating the influence of misfit dislocations on dopant segregation at SrTiO 3 /MgO heterointerfaces are reported. SrO-and TiO 2 -terminated interfaces that have differing misfit dislocation structure were considered for trivalent dopants segregation. At SrO-terminated interface, dopants tend to segregate toward but not precisely to the heterointerface, whereas at TiO 2 -terminated interface, dopants exhibit a thermodynamic preference to accumulate at the heterointerface. Most favorable segregation sites at SrO-terminated interface are located within the coherent terrace, whereas those at TiO 2 -terminated interface are at misfit dislocation intersections. Atomic layer chemistry and the resulting misfit dislocation structure at the heterointerface, along with concomitant strain at the heterointerface due to mismatched dopants, play a critical role in influencing the observed trends for dopant segregation. Overall, the present results offer a fundamental atomic scale perspective of dopant behavior at semi-coherent complex oxide heterointerfaces and the interplay between dopant chemistry, interface chemistry, and misfit dislocation structure.

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Segregation of Mn²⁺Dopants as Interstitials in SrTiO₃Grain Boundaries

Cited by 17 publications

References 24 publications

Implementing an accurate and rapid sparse sampling approach for low-dose atomic resolution STEM imaging

Implementing an accurate and rapid sparse sampling approach for low-dose atomic resolution STEM imaging

Effect of doping location induced anisotropy on thermophysical properties of dilute Fe₂O₃‐Y₂O₃‐ZrO₂ solid solutions

Influence of Chemistry and Misfit Dislocation Structure on Dopant Segregation at Complex Oxide Heterointerfaces

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Segregation of Mn2+Dopants as Interstitials in SrTiO3Grain Boundaries

Cited by 17 publications

References 24 publications

Implementing an accurate and rapid sparse sampling approach for low-dose atomic resolution STEM imaging

Implementing an accurate and rapid sparse sampling approach for low-dose atomic resolution STEM imaging

Effect of doping location induced anisotropy on thermophysical properties of dilute Fe2O3‐Y2O3‐ZrO2 solid solutions

Influence of Chemistry and Misfit Dislocation Structure on Dopant Segregation at Complex Oxide Heterointerfaces

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Segregation of Mn²⁺Dopants as Interstitials in SrTiO₃Grain Boundaries

Effect of doping location induced anisotropy on thermophysical properties of dilute Fe₂O₃‐Y₂O₃‐ZrO₂ solid solutions