Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method

Zayachuk, D.M.; Ilyina, O.S.; Pashuk, A.; Mikityuk, V. I.; Shlemkevych, V.V.; Csík, A.; Kaczorowski, D.

doi:10.1016/j.jcrysgro.2013.04.039

Cited by 7 publications

(9 citation statements)

References 17 publications

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“…Our recent studies [9] have revealed another unique feature in behaviour of REE impurities, which can be related to the well-known effect of small doses. On the example of Eu impurity in PbTe crystals it has been shown that if the PbTe:Eu crystal is grown by the Bridgman method from melt with very low initial concentrations of Eu impurity (10 19 cm -3 and less), it is possible to form a specific two-section crystal with a doped surface and undoped volume.…”

Section: Introductionmentioning

confidence: 90%

Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method

Zayachuk¹,

Kaczorowski²,

Fedkovich³

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Presented in this work are the results of the first systematic study of magnetic properties inherent to surface layers of PbTe:Eu crystals grown from melt with a low initial concentration of Eu impurity) (int Eu ml N (about 110 19 cm-3) using the Bridgman method. The magnetic field dependences of magnetization at the temperature 1.72 K and temperature dependences of magnetic susceptibility within the temperature range 1.7 to 10 K of the surface powder samples has been investigated. Inside the surface layers, formation of both small magnetic complexes based on Eu impurity and lead-based inclusions superconducting at low temperatures, which originate in a correlated way during the growth process of doped ingots, has been established. The observed correlations are manifested in a consistent distribution of both europium-based and leadbased units along the lateral surface, where the probability of their formation increases towards the end of the doped ingot. Based on the analysis of the obtained magnetic data, it has been suggested that the lead-based inclusions, being formed within the surface layer of PbTe:Eu crystals during the process of their growth and passing into a superconducting state on cooling, are the type II superconductors with a very high top critical field H c2 at low temperatures. At T = 1.7 K, H c2 of the inclusions is estimated to exceed 50.0 kOe. The important role of the background oxygen impurity in formation of magnetic properties of the surface layers of PbTe:Eu crystals has been suggested.

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Section: Introductionmentioning

confidence: 90%

Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method

Zayachuk¹,

Kaczorowski²,

Fedkovich³

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Зокрема, така ситуація виникає при боковому профілюванні кристалічних зливків, що мають конічно-циліндричну форму. Необхідність таких досліджень виникає, перш за все, при вивченні розподілу легуючих домішок в поверхневих шарах кристалів, вирощених з легованих розплавів [12].…”

Section: вступunclassified

Formation of the Sputtered Phase of PbTe Crystals by Ar+ Plasma and Re-deposition of the Sputtered Species at Secondary Neutral Mass Spectrometry Conditions

Zayachuk

Слынько

Csík

2017

PCSS

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Formation of the Pb and Te sputtered phase under exposure of the lateral surface of PbTe crystals grown from melt by the Bridgman method by Ar+ plasma at Secondary Neutral Mass Spectrometry (SNMS) conditions and re-deposition of the sputtered species on the sputtering crystal surface are investigated. Experimental evidence of mutual influence of the sputtering and re-deposition processes on each other during prolonged depth profiling of PbTe crystals is presented. Sputtering of the PbTe crystal surface forms the strongly supersaturated sputtered phase of Pb and Te. Re-deposition of the Pb and Te sputtered atoms on the crystal surface results in oscillations of sputtering rate of PbTe crystal and changes of average intensity of Pb and Te sputtering over sputtering time. A possible role of both the sub-critical nuclei of newly re-deposited phase and the re-deposited surface structures of post-critical sizes in generation of the features of PbTe crystal sputtering is discussed. It is concluded that formation and re-sputtering of the sub-critical nuclei of re-deposited phase leads to the oscillations of sputter yields of Pb and Te. Growth and re-sputtering of the re-deposited surface structures of post-critical sizes lead to changes of average values of Pb and Te sputter yields.

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“…Their physical properties are determined by both the intrinsic defects of crystal lattice and the foreign impurities. The impurities of rare earths elements are especially effective in controlling the system of intrinsic defects and other important parameters of these materials [6][7][8][9][10][11]. The use of doping processes requires control of the real distribution of the doping impurities in the doped crystals.…”

Section: Introductionmentioning

confidence: 99%

“…Depth profiling with Secondary Neutral Mass Spectrometry (SNMS) is an efficient method for this. In particular, its use has allowed revealing the non-uniform segregation of the impurity of Europium at the PbTe crystals grown from doped melt by the Bridgman method [6]. More detailed studies of both the doped and undoped PbTe crystals by SNMS method recently allowed us to reveal the new phenomena of their sputtering by Ar + plasma: aperiodical oscillations of Pb and Te sputtering; a huge preference of Te sputtering reaching more than two orders of magnitude at the beginning of sputtering process; and a significant excess of Te integrated sputter yield over that of Pb for prolonged sputtering by low energy plasma [14].…”

Section: Introductionmentioning

confidence: 99%

Growth of Surface Micro- and Nanostructures During Depth Profiling of PbTe Crystals by Ar Plasma

Zayachuk¹,

Слынько²,

Csík³

2017

J. Nano- Electron. Phys.

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Peculiarities of depth profiling of PbTe crystals by Ar plasma with energy of 350 eV at the conditions of Secondary Neutral Mass Spectrometry originated from the crystal growth environment are presented. The crystals grown from vapor phase and from melt by the Bridgman method were studied. The natural faceted surface corresponding to the crystallographic plane of high symmetry (100), the natural lateral surfaces of crystal ingots, and the surfaces processed mechanically during cutting of the crystals were profiled. Nucleation, growth, and re-sputtering of the arrays of micro-and nanoscopic surface structures on the sputtered surfaces as a result of re-deposition of sputtered Pb and Te atoms were observed. It was determined that the growth environment of the PbTe crystal surfaces has a strong effect on nucleation and growth of the surface micro-and nanostructures in the conditions of continuous surface bombardment by Ar ions during depth profiling. This does not prevent the correct determination of the composition of the studied objects via the analysis of the composition of sputtered phase, if sputtering continues for at least 5-10 minutes.

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Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method

Cited by 7 publications

References 17 publications

Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method

Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method

Formation of the Sputtered Phase of PbTe Crystals by Ar+ Plasma and Re-deposition of the Sputtered Species at Secondary Neutral Mass Spectrometry Conditions

Growth of Surface Micro- and Nanostructures During Depth Profiling of PbTe Crystals by Ar Plasma

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