1970
DOI: 10.1016/0011-2275(70)90015-9
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Selection of a thermal bonding agent for temperatures below 1 K

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Cited by 51 publications
(13 citation statements)
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“…The thermal resistance is about (17/P)K4/W for such a joint. 5 The self-heating then causes a temperature rise of the order of 4 J.LK at 60 mK, increasing to about 50 J.LK at 2S mK.…”
Section: Q=123cjtanilv2 (Pw) mentioning
confidence: 99%
“…The thermal resistance is about (17/P)K4/W for such a joint. 5 The self-heating then causes a temperature rise of the order of 4 J.LK at 60 mK, increasing to about 50 J.LK at 2S mK.…”
Section: Q=123cjtanilv2 (Pw) mentioning
confidence: 99%
“…Both the conductance through the thin layer of Stycast [7] and the Kapitza conductance at the boundary [8] should be negligible compared with the graphite conductance. The measured conductance can therefore be taken to be that of the bulk graphite alone.…”
mentioning
confidence: 99%
“…[14]. The thermal coupling 1=G abs ¼ 1=G K þ 1=G v between the absorber and the Si chip is due to the Kapitza thermal contact resistance G K ¼ 1:6 Â 10 À3 T 3 A assuming a contact area A ¼ 4 mm 2 , plus the thermal conductivity of the varnish G v ¼ 105 mW=K [15]. The heat capacities C LiF ¼ 0:19 nJ=K and C SiþTES ¼ 11 pJ=K at T c ¼ 155 mK are calculated from the Debye law [16].…”
Section: Methodsmentioning
confidence: 99%