Selection of modes perpendicular to the junction plane in GaAs large-cavity double-heterostructure lasers

Krupka, D. C.

doi:10.1109/jqe.1975.1068645

Cited by 20 publications

(3 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The same shift occurs for the 1-order mode, but since a larger volume is needed to accommodate this mode, most of one of its lobes remains in the tellurium-doped noo2-layer. Calculations 18 indicate that the high optical losses created by tellurium doping reduce the 1-order mode net gain below that of the 0-order mode. Hence this design should produce a large 0-order cavity volume compatibly with low threshold current.…”

Section: Mode Confinement Perpendicular To Junction Planementioning

confidence: 99%

A Gallium-Arsenide Laser Facsimile Printer

Miller¹,

Willens²,

Watson³

et al. 1979

Bell System Technical Journal

View full text Add to dashboard Cite

Section: Mode Confinement Perpendicular To Junction Planementioning

confidence: 99%

A Gallium-Arsenide Laser Facsimile Printer

Miller¹,

Willens²,

Watson³

et al. 1979

Bell System Technical Journal

View full text Add to dashboard Cite

“…In addition, the states, cPk' are not plane waves. As a result, the Fresnel reflection coefficients," which were used extensively in previous calculations, [1][2][3][4]8 are not, in principle, valid for this problem. We define Lln(x) as the difference between the refractive index inside the laser at position x, (nl(x», and the refractive index of the cladding layers at position x = n, (x)…”

Section: Modelmentioning

confidence: 99%

Exact Calculation of the Reflection Coefficient for Coated Optical Waveguide Devices

Kaplan

Deimel

1984

At&T Bell Laboratories Technical Journal

View full text Add to dashboard Cite

We derive an exact solution to the problem of the reflection coefficient for a coated slab waveguide. A series of computer calculations apply these results to a Λ = 1.3 μm InGaAsP laser with an active area of 0.2 micron, an active area index of refraction of 3.51, and a cladding index of refraction of 3.22. Our results show that the correction due to the index step is a few percent for an uncoated laser. For antireflection coatings (reflectivity less than 1 percent), the correction due to the index step is significant. These results are important in choosing coating indices and thicknesses when minimum reflectivities are desired (e.g., for a superluminescent diode). The results, calculated over a range of indices of refraction of the coating, show that the TE and TM reflectivities are minimized at about the same value of the index, 1.84. However, the coating thicknesses at which the reflectivity is minimized are different for the TE and TM case. For example, when the TE reflectivity is minimized, the TM reflectivity exceeds the TE reflectivity by over two orders of magnitude.

show abstract

“…He authored or coauthored some 190 papers in professional journals, as well as two books: Quantum Electronics (New York: Wiley 1967, 1975 and Zntroduction to Optical Electronics (New York: Holt, Rinehart, andWinston, 1971,1976). He is also the Associate Editor of Optics Communications and the Journal of Applied Physics, and was previously Associate Editor of the IEEE JOURNAL OF QUANTUM ELECTRONICS.…”

Section: A1mentioning

confidence: 99%