2001
DOI: 10.1063/1.1402959
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Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates

Abstract: Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichloro- silane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. Hi… Show more

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Cited by 102 publications
(103 citation statements)
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“…There are various growth methods for TC materials, including metalorganic chemical vapor deposition (MOCVD), ion-assisted deposition (IAD), pulsed laser deposition (PLD) and sputtering [13][14][15][16][17][18][19][20][21][22]. Table 15.2 shows a few of the TCs of interest, such …”
Section: Materials For the Tcs And Their Requirementsmentioning
confidence: 99%
“…There are various growth methods for TC materials, including metalorganic chemical vapor deposition (MOCVD), ion-assisted deposition (IAD), pulsed laser deposition (PLD) and sputtering [13][14][15][16][17][18][19][20][21][22]. Table 15.2 shows a few of the TCs of interest, such …”
Section: Materials For the Tcs And Their Requirementsmentioning
confidence: 99%
“…Controlling such interaction provides an opportunity to nanoengineer the surface properties and to control the thin film growth in designated areas and in 3D nanostructures to give rise to interesting and unexpected functionalities [19,20]. Area selective ALD-based methods have been pursued to overcome these issues [17,[21][22][23][24]. Among them, the use of self-assembled monolayers and polymethyl methacrylate (PMMA) resist layer [25,26] is a particularly attractive route to inhibit or activate selected areas of the substrate [23,[27][28][29][30][31] but the robustness of these organic films against certain ALD conditions is rather poor, being an ineffective selective barrier layer for many ALD processes.…”
Section: Introductionmentioning
confidence: 99%
“…Photoresist masters have been utilized for replica-molding PDMS structures used in soft lithography (Chen et al, 1997;Jiang et al, 2005;Kane et al, 1999), microfluidics (Beebe et al, 2002;Jeon et al, 2000;Khademhosseini et al, 2004a), microelectronics (Yan et al, 2001), and biological applications, such as the construction of neuronal cell networks (Dertinger et al, 2002;Heller et al, 2005), the design of cellular arrays for high throughput screening Nelson et al, 2003), and other applications (Bhatia et al, 1997;Khademhosseini et al, 2004b;Suh et al, 2004). Indeed, several groups have been seeking to develop alternatives to traditional photolithography for the patterning of photoresists.…”
Section: Introductionmentioning
confidence: 99%