Selective-area epitaxy of GaAs using a GaN mask in in-situ processes

Yoshida, Seikoh; Sasaki, Masahiro; Kawanishi, Hidenori

doi:10.1016/0022-0248(94)90380-8

Cited by 33 publications

(4 citation statements)

References 11 publications

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“…The Group 13 nitrides of AlN, GaN, and InN and their alloys have high industrial and scientific interest due to their applications in short-wavelength light-emitting diodes (LEDs), laser diodes (LDs), high-temperature electronics, and ultrahigh-density optical storage systems, respectively. − These materials have excellent physical properties such as wide direct energy band gap, strong atomic bonding, and formation of a continuous range of solid solutions and superlattices. − Gallium nitride and related compounds (e.g., AlGaInN and GaInN) are promising materials for the development of optoelectronic devices in the region of blue to ultraviolet light emission, due to a direct energy band gap of 3.45 eV for GaN at room temperature. − …”

Section: Introductionmentioning

confidence: 99%

Growth of GaN Layer from the Single-Source Precursor (Et₂GaNH₂)₃

et al. 1998

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In recent years, there has been a great interest in new routes for depositing GaN films in the application of III-V semiconductors. We report herein on the deposition of highly crystalline GaN films by low-pressure MOCVD (in the low-temperature range of 500-700 °C and the pressure range of 77-177 mbar) using the single-source precursor (Et 2 GaNH 2 ) 3 . This process was investigated for a variety of substrates (Si(100) and polycrystalline Al 2 O 3 ) using a cold wall chemical vapor deposition reactor. The thickness of films grown under these conditions ranged from 6 to 8 µm, and the growth rates varied from 7 to 8 µm/h. Films deposited at lower temperatures (500-550 °C) had a pale yellowish color and were amorphous. At 600 °C slightly gray colored films were obtained, while above 650 °C highquality crystalline films were formed, which show diffraction patterns characteristic of the hexagonal wurtzite structure. The films are consistent with the 1:1 stoichiometry of GaN and have carbon and oxygen as impurities; however, cracks were not evident on the surface by SEM examination up to a magnification of 30 000. In contrast, samples of GaN deposited under high-vacuum conditions (up to 10 -2 mbar) have neither a 1:1 stoichiometry nor a smooth surface morphology. Atomic force microscopy, scanning electron microscopy, Auger electron microscopy, and energy-dispersive X-ray analyses were used for the study of the structure, composition, and morphology of the films.

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Section: Introductionmentioning

confidence: 99%

Growth of GaN Layer from the Single-Source Precursor (Et₂GaNH₂)₃

et al. 1998

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“…3,4 However, there has been less work on STM modification of GaAs surfaces. 10 Yoshida et al used dimethylhydrazine as an N radical source and formed a GaN mask, patterned using EB lithography, and grew selective-area GaAs ͑6ϫ12 to 7ϫ23 m͒. 6 In each case, the modified area is on the order of 100 nm.…”

Section: ͓S0003-6951͑96͒01213-4͔mentioning

confidence: 99%

“…Dagata et al have formed structures on aqueous-sulfidepassivated GaAs in air 5 and Whitman et al have applied voltage pulses to induce the diffusion of Cs atoms on GaAs ͑110͒ in an UHV. 10 Recently, we successfully used N radicals dissociated from N 2 gas with a heated tungsten ͑W͒ filament to obtain a monolayer-coverage nitride layer. Moriarty et al modified the As trimer arrangement on GaAs ͑111͒B over a 10 nm range.…”

Section: ͓S0003-6951͑96͒01213-4͔mentioning

confidence: 99%

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Kasu

Makimōto

Kobayashi

1996

Applied Physics Letters

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Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is −3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

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“…A thin nitride layer is also applied as a mask and patterning can be performed by scanning tunneling microscopy (STM). 15,16) The layer nitrided at high temperature is difficult to cut in STM lithography; 17) therefore, it is also important to fabricate a nitridation mask at low temperature.…”

Section: Introductionmentioning

confidence: 99%

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

Naritsuka¹,

Mori²,

Takeuchi³

et al. 2011

Jpn. J. Appl. Phys.

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We derive an improved prescription for the merging of matrix elements with parton showers, extending the CKKW approach. A flavour-dependent phase space separation criterion is proposed. We show that this new method preserves the logarithmic accuracy of the shower, and that the original proposal can be derived from it. One of the main requirements for the method is a truncated shower algorithm. We outline the corresponding Monte Carlo procedures and apply the new prescription to QCD jet production in e + e − collisions and Drell-Yan lepton pair production. Explicit colour information from matrix elements obtained through colour sampling is incorporated in the merging and the influence of different prescriptions to assign colours in the large N C limit is studied. We assess the systematic uncertainties of the new method.

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Selective-area epitaxy of GaAs using a GaN mask in in-situ processes

Cited by 33 publications

References 11 publications

Growth of GaN Layer from the Single-Source Precursor (Et₂GaNH₂)₃

Growth of GaN Layer from the Single-Source Precursor (Et₂GaNH₂)₃

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

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Selective-area epitaxy of GaAs using a GaN mask in in-situ processes

Cited by 33 publications

References 11 publications

Growth of GaN Layer from the Single-Source Precursor (Et2GaNH2)3

Growth of GaN Layer from the Single-Source Precursor (Et2GaNH2)3

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

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Growth of GaN Layer from the Single-Source Precursor (Et₂GaNH₂)₃

Growth of GaN Layer from the Single-Source Precursor (Et₂GaNH₂)₃