Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber

Yamamoto, Kazuhiko; Asahi, H.; Hayashi, Toshihiko; Hidaka, K.; Gonda, S.

doi:10.1016/s0022-0248(96)00863-9

Cited by 7 publications

(3 citation statements)

References 15 publications

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“…We hypothesize that the dimethyl amine ALD reaction product is responsible for the native oxide etch. We base this assumption on the fact that: similar observations have been made for other amine-based ALD processes and the thermal decomposition of amine metal organic species such as tetrakis dimethyl amino arsenic (TDMAAs) and tetrakis dimethyl amino antimony (TDMASb) have been routinely used for in situ cleaning of III–V semiconductors from the surface oxides. − …”

Section: Discussionmentioning

confidence: 98%

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Interface Between Atomic Layer Deposition Ta₂O₅ Films and GaAs(100) Surfaces

Gougousi

2012

J. Phys. Chem. C

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Ta 2 O 5 films were deposited on GaAs(100) surfaces using thermal atomic layer deposition from pentakis dimethyl amino tantalum (PDMAT) and H 2 O. The interface between the films and native oxide covered GaAs surfaces has been examined using X-ray photoelectron spectroscopy as a function of film thickness and for deposition temperatures ranging from 200 to 350°C. Gradual removal of the surface arsenic and gallium oxides was observed, with the removal of the arsenic oxides in general more efficient. The high oxidation states of both the arsenic and the gallium oxides were also found easier to remove. Elevation of the process temperature above 300°C resulted in significant enhancement of the native oxide removal rate. When films were deposited on GaAs surfaces that had the surface oxides removed, a practically sharp interface between the film and the GaAs substrate was maintained.

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Section: Discussionmentioning

confidence: 98%

“…the thermal decomposition of amine metal organic species such as tetrakis dimethyl amino arsenic (TDMAAs) and tetrakis dimethyl amino antimony (TDMASb) have been routinely used for in situ cleaning of III–V semiconductors from the surface oxides. − …”

Section: Discussionmentioning

confidence: 99%

Interface Between Atomic Layer Deposition Ta₂O₅ Films and GaAs(100) Surfaces

Gougousi

2012

J. Phys. Chem. C

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“…Recently, the combination of the growth and in situ etching in identical equipment has been emerging as a very promising technique 4 for surface cleaning 5 and fabrication of nanoscale structures, such as quantum dots. 6,7 As is well known, the presence of interface states at an etched/regrown interface or an epi layer substrate interface is harmful for device performance. Multiple process of ex situ etching and passivation of semiconductor heterostructures are commonly used before regrowth to decrease the interface state density.…”

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confidence: 99%

Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum

Otsuka

Nishizawa

Oyama

et al. 1999

J. Electrochem. Soc.

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Intermittent injection of trisdimethylaminophosphorus (TDMAP) is applied for selective etching of the InP in ultrahigh vacuum by using molecular layer epitaxy equipment. The etching depth is controlled by the number of injection cycles of TDMAP in a self‐limiting fashion. The etch rate per injection cycle increases with the injection time of TDMAP and is saturated. The etch rate is well described by a Langmuir‐type equation. The etch rate is independent of the injection time at times longer than 0.3 s, and is also independent of the injection pressure of TDMAP. This is almost independent of the vacuum time. The activation energy for etching with TDMAP is determined to be 1.27 eV, which is half of that for the decomposition of phosphorus from InP substrate. Well‐controlled digital etching is realized at substrate temperatures as low as 350°C. © 1999 The Electrochemical Society. All rights reserved.

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