Selective area grown AlGaInAs multi-quantum wells characterization and modeling for photonic integrated devices

Binet, Guillaume; Décobert, J.; Lagay, N.; Maia, A. D. B.; Lagrée, Pierre‐Yves; Rinaldi, F.

doi:10.1109/iciprm.2016.7528579

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…The diffraction patterns were dominated by the QW diffraction and InP (004) diffraction peaks. The peak at 63.345° (for two theta) was originated from the InP layer and interference patterns located at the side vicinity were from AlGaInAs QW [ 20 ]. Interference fringes distributed over a wide angle range were affected by the composition and thickness of the Al 0.07 Ga 0.22 In 0.71 As quantum well and Al 0.225 Ga 0.285 In 0.490 As barriers.…”

Section: Resultsmentioning

confidence: 99%

Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

et al. 2018

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An aluminum gallium indium arsenic (AlGaInAs) material system is indispensable as the active layer of diode lasers emitting at 1310 or 1550 nm, which are used in optical fiber communications. However, the course of the high-temperature instability of a quantum well structure, which is closely related to the diffusion of indium atoms, is still not clear due to the system’s complexity. The diffusion process of indium atoms was simulated by thermal treatment, and the changes in the optical and structural properties of an AlGaInAs quantum well are investigated in this paper. Compressive strained Al0.07Ga0.22In0.71As quantum wells were treated at 170 °C with different heat durations. A significant decrement of photoluminescence decay time was observed on the quantum well of a sample that was annealed after 4 h. The microscopic cathodoluminescent (CL) spectra of these quantum wells were measured by scanning electron microscope-cathodoluminescence (SEM-CL). The thermal treatment effect on quantum wells was characterized via CL emission peak wavelength and energy density distribution, which were obtained by spatially resolved cathodoluminescence. The defect area was clearly observed in the Al0.07Ga0.22In0.71As quantum wells layer after thermal treatment. CL emissions from the defect core have higher emission energy than those from the defect-free regions. The defect core distribution, which was associated with indium segregation gradient distribution, showed asymmetric character.

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Section: Resultsmentioning

confidence: 99%

Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

et al. 2018

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“…The GRE induced by SAG has been known for over 40 years. [17,18] Nevertheless, recent advances on micro-X-Raydiffraction (μXRD) and microphotoluminescence (μPL) characterization [19] and the development of a comprehensive vapor phase diffusion (VPD) model [20] have unlocked a viable SAG approach for a monolithic InP platform. For the case of multiple quantum wells (MQWs), the GRE allows for bandgap engineering as will be demonstrated.…”

Section: Integration Of Sag Into Process Flowmentioning

confidence: 99%

Integration by Selective Area Growth of Multiple Semi‐Insulating Buried Heterostructure‐Distributed Feedback Lasers with Optimized Performance Over 100 nm in the O‐Band

Afonso,

Cerulo,

Vaissiere

et al. 2024

Physica Status Solidi (a)

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The introduction of selective area growth (SAG) in a mature semi‐insulating buried heterostructure (SIBH) platform for the realization of photonic integrated circuits on monolithic InP has been demonstrated. A thorough determination of the relations between quantum well thickness, transition energies, and mask geometries is performed on dedicated wafers by means of extensive micro‐X‐Ray diffraction and microphotoluminescence measurements. Based on those results, SAG is used to grow, with a single epitaxy step, AlGaInAs multiple quantum wells heterostructures, to tailor the active regions of Fabry–Pérot and distributed feedback (DFB) lasers emitting in the O‐Band. SIBH DFB lasers are realized, exhibiting threshold currents < 7.2 mA (at 25 °C), and emitting over 100‐nm spectral range in the O‐Band.

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Selective area grown AlGaInAs multi-quantum wells characterization and modeling for photonic integrated devices

Cited by 2 publications

References 3 publications

Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

Integration by Selective Area Growth of Multiple Semi‐Insulating Buried Heterostructure‐Distributed Feedback Lasers with Optimized Performance Over 100 nm in the O‐Band

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