Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Cordier, Y.; Sèmond, F.; Moreno, J. C.; Frayssinet, Éric; Benbakhti, B.; Cao, Zhan; Chenot, Sébastien; Nguyen, Huu Lam; Tottereau, O.; Soltani, A.; Blary, K.

doi:10.1016/j.mssp.2009.07.003

Cited by 7 publications

(4 citation statements)

References 11 publications

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“…Alternative solution could come from localized epitaxy. GaN selective growth has been demonstrated with Ti , SiO 2 , SiN x , or Si 3 N 4 masks, by metal‐organic chemical vapor deposition (MOCVD) for temperatures around 1000 °C or molecular beam epitaxy (MBE) at lower temperatures . But the use of any foreign element as mask during growth should be considered with precautions for obvious contamination reasons.…”

Section: Introductionmentioning

confidence: 97%

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Jaud

Auvray

Kahouli

et al. 2016

Phys. Status Solidi A

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In this study, a new approach toward localized p‐type doping of GaN was explored by implementing vapor–liquid–solid (VLS) transport for both reducing the growth temperature and reaching very high Mg incorporation levels. The starting seeds are GaN(0001) epilayers grown on Si(111). The growth cycle includes three steps. At first, Ga is deposited by MOCVD onto the GaN surface, resulting in a network of Ga droplets with sub‐micrometer diameters. Then, Mg is incorporated into the droplets, from the gas phase, using (MeCP)2Mg precursor. Finally, droplets are nitridated at 600–700 °C in flowing NH3. Performing one complete growth cycle leads to a network of well‐separated dots and/or ring‐shaped GaN features. It is demonstrated that the Mg content in the droplets drastically influences the GaN growth mode. Increasing Mg incorporation promotes growth at the liquid/solid interface versus growth at the triple line. To improve the seed coverage, several successive cycles have been performed leading to GaN films with thickness up to ∼250 nm. SIMS analyses demonstrate the very high incorporation of Mg in the VLS‐grown material, with concentrations from 3 × 1019 to 8 × 1021 cm−3. Nevertheless, pronounced O incorporation (a few 1020 cm−3) is also found.

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Section: Introductionmentioning

confidence: 97%

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Jaud

Auvray

Kahouli

et al. 2016

Phys. Status Solidi A

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“…In the most standard version of the technique GaN is grown on GaN/ sapphire or GaN/Si templates masked with an array of nanoholes. Thin films of Ti [38][39][40][41][42][43][44][45][46][47][48][49], SiO 2 [41,[50][51][52] or SiN [53][54][55][56] are the most commonly used substrate masking materials. Under suitable growth conditions GaN crystallization starts inside the openings in the mask and then proceeds in a form of vertical NWs while GaN nucleation on the mask is prohibited.…”

Section: Introductionmentioning

confidence: 99%

Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al _x O _y nucleation layer

et al. 2020

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Examples are presented that application of amorphous Al x O y nucleation layer is an efficient way of controlling spatial distribution of GaN nanowires grown by plasma-assisted molecular beam epitaxy. On GaN/sapphire substrates Al x O y stripes induce formation of GaN nanowires while a compact GaN layer is formed outside the stripes. We show that the ratio of nanowire length h to the thickness of the compact layer d can be tailored by adjusting impinging gallium and nitrogen fluxes. Calculations of the h/d aspect ratio were performed taking into account dependence of nanowire incubation time on the growth parameters. In agreement with calculations we found that the value of h/d ratio can be increased by increasing the N/Ga flux ratio in the way that the N-limited growth regime determines nanowire axial growth rate while growth of compact layer remains Ga-limited. This ensures the highest value of the h/d aspect ratio. Local modification of GaN growth kinetics caused by surface diffusion of Ga adatoms through the boundary separating the Al x O y stripe and the GaN/sapphire substrate is discussed. We show that during the nanowire incubation period gallium is transported out of the Al x O y stripe, which delays nanowire nucleation onset and leads to reduced length of GaN nanowires in the vicinity of the stripe edge. Simultaneously the growth on the GaN/sapphire substrate is locally enhanced, so the planar GaN layers adopts a typical edge shape of mesa structures grown by selective area growth. Ga diffusion length on a-Al x O y surface of ∼500 nm is inferred from our results.

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“…In the standard SAG, GaN is deposited on GaN/sapphire or GaN/Si templates with an array of holes in a mask. Thin films of Ti, − SiO 2 , ,− or SiN − are the commonly used masking materials. Under suitable growth conditions, GaN NWs grow in the holes while GaN nucleation on the mask is prohibited.…”

Section: Introductionmentioning

confidence: 99%

Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on Al_xO_y Nucleation Stripes

Sobanska

Żytkiewicz

Ekielski

et al. 2020

Crystal Growth & Design

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Selective area epitaxial growth of III–V and III–N nanostructures and nanowires was proven efficient for synthesis of scalable and highly ordered electronic and optoelectronic nanomaterials on dissimilar substrates. Here, we present experimental data and a supporting model showing that the heights of GaN nanowires obtained by selective area growth on a-Al x O y stripes in SiN x mask are spatially inhomogeneous, with noticeably higher nanowires at the edge of the stripes compared to the middle region. Careful investigation of all stages of the nanowire formation process, including nucleation of GaN islands of different density and size and the nanowire growth itself, allows us to identify surface diffusion of Ga adatoms from the mask into the stripes as the origin of the observed inhomogeneity. The height inhomogeneity strongly depends on the width of the stripe. The model fits very well the whole set of the observed phenomena, including the nucleation time, density, and size of GaN islands and height profiles of GaN nanowires versus the position across the stripe for different stripe widths. On a general note, these findings demonstrate that nucleation and growth kinetics in selective area epitaxy depends on the size of the pattern, which makes it very different from growth on the equivalent planar layers.

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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Cited by 7 publications

References 11 publications

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al _x O _y nucleation layer

Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on Al_xO_y Nucleation Stripes

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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Cited by 7 publications

References 11 publications

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer

Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes

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Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al _x O _y nucleation layer

Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on Al_xO_y Nucleation Stripes