Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate

Abstract

This paper presents a novel method for growing a lateral N+-GaN/n-Si heterojunction with minimum material defects and melt-back etching on nanogrooved Si(100) substrates to create devices with a high breakdown voltage and power amplification efficiency. The core technique involves the selective-area growth of hexagonal-to-cubic (h-to-c) GaN on the nano-V-grooved (111) facets of a Si(100) substrate by using metal–organic chemical vapor deposition. The paper discusses in detail the proposed process for realizing an n-type metal–oxide–semiconductor field-effect device with a lateral GaN drain on a cost-effective Si(100) substrate.