Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication

Hwang, D. S.; Yasuda, Tetsuji; Ikuta, Kazuyuki; Yamasaki, Satoshi; Tanaka, Kazunobu

doi:10.1143/jjap.37.l1087

Cited by 13 publications

(4 citation statements)

References 11 publications

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“…Because the amount of SiO 2 on the surface of alkylated samples was very small, it was not possible to collect spectra of the SiO 2 signal (72-76 eV) in a short enough amount of time to prevent beam damage. Instead, signals from the Si LVV (90-92 eV) [18][19][20] and O KLL (510 eV) 21 regions were combined to determine areas of SiO 2 in the SAM image. Spectra were collected with the electron analyzer held in the Si LVV region (92 eV) and the O KLL region (510 eV), which were then superimposed to create a composite image of Si and SiO 2 .…”

Section: Methodsmentioning

confidence: 99%

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

et al. 2006

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High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si + , Si 2+ , Si 3+ , and Si 4+ were detected on the Cl-terminated surface, with the highest oxidation state (Si 4+ ) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p 3/2 peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monolyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH 3 -, C 2 H 5 -, or C 6 H 5 CH 2 -terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed ≈0.20 ML of oxide. This oxide was principally composed of Si + and Si 3+ species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p 3/2 peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7°vs e0.5°off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.

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Section: Methodsmentioning

confidence: 99%

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

et al. 2006

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“…For plasma oxidation of the SiN x layer described in §3. 3,9,10) the the substrate surface is likely to play an important role. Related to this issue, we previously compared Si deposition processes on SiO 2 and SiN x surfaces for the purpose of selective-area growth.…”

Section: Methodsmentioning

confidence: 99%

“…Related to this issue, we previously compared Si deposition processes on SiO 2 and SiN x surfaces for the purpose of selective-area growth. 9,10) We found that the initial growth processes on these two surfaces are distinctly different when Si growth is carried out in a thermal chemical vapor deposition (CVD) mode. In particular, it was observed that the shape of the Si nuclei on SiO 2 is ball-like while those on SiN x wet on the surface.…”

Section: Methodsmentioning

confidence: 99%

Effects of Chemical Composition and Morphology of Substrate Surfaces on Crystallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films

Mori

Yasuda²,

Nishizawa³

et al. 2000

Jpn. J. Appl. Phys.

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Hydrogenated microcrystalline silicon (µc-Si:H) films of 10 nm thickness were prepared by the plasma-enhanced chemical vapor deposition method on glass substrates that had been coated by a layer composed of Si, O, and N. The chemical composition of this layer was changed systematically, and the resultant changes in the crystallinity of the µc-Si:H films were investigated using Raman scattering spectroscopy. We have found that SiN x layers inhibit nucleation of microcrystalline Si and the films deposited on them are dominated by an amorphous component, regardless of their stoichiometry. Substrate surfaces rich in Si-O bonds are preferable for the formation of high-quality µc-Si:H films. It has been also found that the morphology of the coated layers does not affect the crystallinity of the µc-Si:H films.

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“…Earlier experimental investigations [1][2][3] have demonstrated that upon electron irradiation a silica surface undergoes changes in not only photosensitivity but also surface reactivity, mainly due to irradiation-induced defects. Oxygen deficient centers (ODCs) are the most common point defects in oxide materials [4 -6].…”

mentioning

confidence: 99%

Structure and Interconversion of Oxygen-Vacancy-Related Defects on Amorphous Silica

Kuo

Hwang

2006

Phys. Rev. Lett.

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Atomic structure and structural stability of neutral oxygen vacancies on amorphous silica are investigated using combined Monte Carlo and density functional calculations. We find that, unlike their bulk counterparts, the Si-Si dimer configuration of surface oxygen vacancies is likely to be unstable due to the high tensile strains induced, thereby undergoing thermally activated transformation with a moderate barrier into other stable configurations including dicoordinated silicon, silanone, or a subsurface Si-Si dimer, depending on the local surface structure. Pathways for the interconversion between these oxygen-vacancy-related defects are presented with a discussion of their viability.

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Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication

Cited by 13 publications

References 11 publications

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

Effects of Chemical Composition and Morphology of Substrate Surfaces on Crystallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films

Structure and Interconversion of Oxygen-Vacancy-Related Defects on Amorphous Silica

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