Selective Area Masked Growth (Nano to Micro)

Kim, Jeong Dong; Chen, Xiaogang; Coleman, J. J.

doi:10.1016/b978-0-444-63304-0.00010-x

Cited by 7 publications

(20 citation statements)

References 143 publications

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“…We used the vapor-phase diffusion model [ 9 ] for SAE simulations. The model is based on calculating the concentration profile of particles in the gas phase over the substrate surface.…”

Section: Methodsmentioning

confidence: 99%

“…and electrical signals. Selective area epitaxy (SAE) [ 7 , 8 , 9 ] is one of the effective approaches to the implementation of these elements, using selective growth on patterned substrates with passivating masks, which exclude growth above them and ensure growth outside (i.e., in the so-called windows). There are a number of works demonstrating the use of SAE in the fabrication of different optical devices based on various material systems, including III-V (GaAs [ 8 , 10 , 11 ], InP [ 12 , 13 , 14 , 15 , 16 , 17 ]) and III-N semiconductor compounds (GaN [ 18 ], InGaN [ 19 ]).…”

Section: Introductionmentioning

confidence: 99%

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Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

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Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

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“…We used the vapor-phase diffusion model [ 9 ] for SAE simulations. The model is based on calculating the concentration profile of particles in the gas phase over the substrate surface.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

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“…In top-down architecture, the epitaxial layer is spatially patterned by wet or dry chemical etching, whereas, in bottom-up architecture, structures are selectively grown while using dielectric masks. Because of this, it is possible to integrate many opto-electro-mechanical devices within one semiconductor substrate, which is required in order to achieve compactness, high stability, and efficiency, as well as minimise losses in modern, technologically advanced semiconductor devices [4].…”

Section: Introductionmentioning

confidence: 99%

“…This phenomenon is called the edge effect and it results from excessive accumulation of epitaxial material adjacent to the dielectric mask. This is also associated with a different growth rate of a structure relative to non-selective deposition [4]. Homogeneous structure growth along the window area is necessary for keeping continuous metallization for the contact layer and close fitting between semiconductor components.…”

Section: Introductionmentioning

confidence: 99%

“…The ratio D/k is the key factor influencing the shape of the structure profile in the window area. It used to be called the effective lateral diffusion length of precursor molecules λ e f f [4,[8][9][10]. Molecules are incorporated with similar probability into the epitaxial structure within the whole window area when the effective diffusion length is greater than the half-width of the window.…”

Section: Introductionmentioning

confidence: 99%

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Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices

et al. 2020

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The design of modern semiconductor devices often requires the fabrication of three-dimensional (3D) structures to integrate microelectronic components with photonic, micromechanical, or sensor systems within one semiconductor substrate. It is a technologically challenging task, as a strictly defined profile of the device structure is obligatory. This can be achieved either by chemical etching or selective deposition on a masked substrate. In this paper, the growth uniformity of AlGaN/GaN heterostructures during selective-area metalorganic vapour-phase epitaxy (SA-MOVPE) was studied. Such structures are typically used in order to fabricate high-electron-mobility transistors (HEMT). The semiconductor material was deposited through 200 μm long stripe-shaped open windows in a SiO2 mask on GaN/sapphire templates. The window width was varied from 5 μm to 160 μm, whereas mask width separating particular windows varied from 5 μm to 40 μm. The experiment was repeated for three samples differing in GaN layer thickness: 150 nm, 250 nm, and 500 nm. Based on theoretical models of the selective growth, a sufficiently uniform thickness of epitaxially grown AlGaN/GaN heterostructure has been achieved by selecting the window half-width that is smaller than the diffusion length of the precursor molecules. A Ga diffusion length of 15 μm was experimentally extracted by measuring the epitaxial material agglomeration in windows in the dielectric mask. Measurements were conducted while using optical profilometry.

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Special Growth Techniques

Pohl

2020

Graduate Texts in Physics

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Selective Area Masked Growth (Nano to Micro)

Cited by 7 publications

References 143 publications

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices

Special Growth Techniques

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