Selective atomic layer etching of Al2O3, AlNx and HfO2 in conventional ICP etching tool

Kuzmenko, V.; Lebedinskij, Y.; Miakonkikh, Andrey V.; Руденко, К. В.

doi:10.1016/j.vacuum.2022.111585

Vacuum

2023

DOI: 10.1016/j.vacuum.2022.111585

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Selective atomic layer etching of Al2O3, AlNx and HfO2 in conventional ICP etching tool

V. Kuzmenko

Y. Lebedinskij

Andrey V. Miakonkikh

et al.

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Cited by 10 publications

(1 citation statement)

References 37 publications

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“…[30,31] Anisotropic ALE has been suggested as an alternative to RIE; anisotropic ALE addresses this challenge by removing layers with atomic-scale precision, offering excellent uniformity and a lower surface roughness compared with that achieved through the RIE process. [32][33][34][35] The anisotropic ALE process consists of a surface modification step and a removal step using ion energy and operates based on a self-limiting reaction. Anisotropic ALE processes for metals such as Co, Mo, Pd, Fe, Cr, Pt, and W have been reported by a few research groups, [36][37][38][39][40][41] but the anisotropic ALE of Ru has not yet been reported.…”

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Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Kim,

Kang,

et al. 2023

Plasma Processes & Polymers

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The plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per cycle (EPC) of 1.5 nm/cycle was achieved with C4F8 plasma, in contrast to the 0.6 nm/cycle achieved with CHF3 plasma. Moreover, chemisorption and diffusion with CF4 plasma yielded an EPC of 1.2 nm/cycle. The ALE process using CHF3 plasma shows the lowest fluorine residue and lowest surface roughness compared with the ALE process using C4F8 and CF4 plasmas.

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Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Kim,

Kang,

et al. 2023

Plasma Processes & Polymers

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Plasma atomic layer etching of molybdenum with surface fluorination

Kim

Kang

et al. 2023

Applied Surface Science

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In Situ Monitoring Surface Reactions in Cryogenic Atomic Layer Etching of Silicon Nitride by Alternating Surface Modification with Hydrogen Fluoride Dose and Ar Plasmas

Hsiao,

Sekine,

Iijima

et al. 2024

Chem. Mater.

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Cryogenic atomic layer etching (ALE) represents a promising technique for achieving subnanoscale material removal in semiconductor processes, owing to its unique self-limiting surface-adsorbing reactions. This paper presents a cryogenic ALE method for SiN, utilizing surface modification with a hydrogen fluoride (HF) dose and an Ar etch step for removing the modification layer. The surface reactions and etching mechanism were examined using in situ monitoring techniques, including spectroscopic ellipsometry and attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR). Our observations reveal a self-limiting etching behavior for SiN and a reduction in the etch amount per cycle (EPC) with a decreasing substrate temperature. During the HF dose step, in situ ATR-FTIR spectra indicate the formation of a surface-adsorbed layer containing ammonium fluorosilicate (AFS) on the SiN surface. Subsequently, during the Ar plasma etching step, both the AFS layer and the surface-adsorbed species were removed. At lower substrate temperatures, the stability of the AFS layer and surface-absorbed species increased, resulting in a reduction in EPC. Through the control of Ar ion energy and substrate temperature, the manipulation of EPC ranging from several nanometers to a few angstroms in atomic layer etching is achieved, offering potential utility in nanoscale device applications utilizing silicon nitride.

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Selective atomic layer etching of Al2O3, AlNx and HfO2 in conventional ICP etching tool

Cited by 10 publications

References 37 publications

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Plasma atomic layer etching of molybdenum with surface fluorination

In Situ Monitoring Surface Reactions in Cryogenic Atomic Layer Etching of Silicon Nitride by Alternating Surface Modification with Hydrogen Fluoride Dose and Ar Plasmas

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