Selective Capacitive Anodization Process for the Fabrication of Josephson Fluxonic Devices

Optimization of Nb/Al-AlO x /Nb Josephson junctions through wafer-scale anodic oxidation: a systematic characterization and performance analysis

“…The process involves placing a wafer with SIS junctions at the anode and a metal cathode plate opposite, with a constant current applied between them. Various methods of SIS junction anodization have been explored, including selective Nb anodization [20], selective Nb etching process [21], self-aligned contact fabrication [22], light anodization process [23], and selective capacitive anodization process [24]. Apart from SIS junction protection, anodic oxidation is also used to decrease the SIS junction scale, particularly in fabricating junctions with a scale <1 µm by sidewall oxidation; anodization spectroscopy is used to identify the SIS junction layer structure before the device microfabrication process [25,26], and Nb 2 O 5 films with high dielectric constants are used to create large capacitors in superconducting electronics [13,27].…”