Selective carrier removal using oxygen implantation in GaAs

Isolation Implant Studies in GaAs

“…This effect is primarily related to the creation of traps and/or point defects due to radiation or implant damage. For GaAs and related compounds implant or radiation damage created by protons (1-3) and boron (4,5) and oxygen (6)(7)(8)(9)(10)(11) ions have been extensively used to create high resistivity regions for device isolation in a wide variety of electronic and opto-electronic applications.…”