2020
DOI: 10.1021/acsami.0c11215
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Selective Control of Oxidation Resistance of Diamond by Dopings

Abstract: A method based on the density functional theory calculations is proposed for predicting the influences of dopants on the diamond oxidation, by evaluating the O adsorption energy, chemical bond weakening related to desorption, and probable products. It is proven by verification tests that oxidation resistances of the diamond materials can be indeed selectively controlled (e.g., −36 to 54.3% for diamond films, −36.5 to 45.1% for diamond grits) by adding various doping sources ((CH 3 O) 3 B, Si(OC 2 H 5 ) 4 , N 2… Show more

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Cited by 10 publications
(3 citation statements)
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“…[ 45 ] Moreover, enhanced hydrophilicity due to the addition of COL was more conducive to cell spreading and thus promoted the proliferation. [ 42,55 ]…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 45 ] Moreover, enhanced hydrophilicity due to the addition of COL was more conducive to cell spreading and thus promoted the proliferation. [ 42,55 ]…”
Section: Resultsmentioning
confidence: 99%
“…In addition to the composition of the material itself, the surface roughness, porosity, pore size, hydrophilic properties of the materials, and other factors also have influences on the cell proliferation. [ 20,53,55,56 ] In general, higher porosity, larger pore size, and enhanced hydrophilicity can promote cell proliferation. [ 53,57,58 ] Compared with PLA/COL‐PA‐3, PLA/COL‐PA‐2 showed higher porosity but smaller pore size (Figure 1H) and poorer hydrophilicity (Figure 2B).…”
Section: Resultsmentioning
confidence: 99%
“…At present, first-principles have become an important method to study the surface, interface, and doping properties of diamond (or a-C). Jia et al calculated the transport properties of Ti on the diamond (100) surface by first-principles. It was discovered that when the content of Ti atoms is low, Ti atoms preferentially adsorb on C–C dimers, but when the content of Ti atoms increases, Ti atoms adsorb in the gap of C–C dimers.…”
Section: Introductionmentioning
confidence: 99%