Selective deposition of CVD iron on silicon dioxide and tungsten

Low, Yee; Bain, Michael; Bien, Daniel C. S.; Montgomery, Jenny; Armstrong, B.M.; Gamble, Harold

doi:10.1016/j.mee.2006.10.008

Cited by 13 publications

(8 citation statements)

References 10 publications

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“…Our experimental results show that Fe has been selectively deposited on Ag, adding to the previous literature on ASD of Fe on metals . Our results also suggest that the electrical resistivity of the surface determines the ability to deposit metallic films by this CVD method and that the CVD method is inherently area selective from the surface electrical resistivity.…”

supporting

confidence: 74%

“…Our experimental results show that Fe has been selectively deposited on Ag, adding to the previous literature on ASD of Fe on metals. 18 Our results also suggest that the electrical resistivity of the surface determines the ability to deposit metallic films by this CVD method and that the CVD method is inherently area selective from the surface electrical resistivity. This inherent area selectivity of the new CVD process, where plasma electrons are used as reducing agents, does not depend on any thermodynamic or kinetic factors, as in other inherent ASD processes.…”

mentioning

confidence: 52%

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Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Nadhom

Boyd

Rouf

et al. 2021

J. Phys. Chem. Lett.

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Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO 2 surfaces whereas several hundred nanometers thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO 2 surface. On the basis of such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.

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supporting

confidence: 74%

mentioning

confidence: 52%

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Nadhom

Boyd

Rouf

et al. 2021

J. Phys. Chem. Lett.

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“…This is because these metals are usually very challenging to deposit (see Section 2.4, CVD of Fe, Co, and Ni). For iron, cobalt, and nickel, different approaches have been used to achieve ASD of these metals [108][109][110][111][112][113]. For instance, iron oxide and nickel oxides are selectively deposited on noble metals by catalytically activating the surface with oxygen [89].…”

Section: Asd Of Fe Co and Nimentioning

confidence: 99%

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

Nadhom

2021

Linköping Studies in Science and Technology. Dissertations

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Metallic films are used to improve optical, chemical, mechanical, magnetic, and electrical properties and are therefore of high importance in many applications, from electronics and catalysis, environmental protection and health, to wearable and flexible electronic materials.Many of these applications, however, require that the metal films are deposited uniformly on topographically complex surfaces and structures. Some form of chemical vapor deposition (CVD) where the deposition is governed by the surface chemistry is needed for uniform film deposition on topographically complex surfaces. Furthermore, area selective deposition (ASD) has gained large considerations lately, where films deposited only on specified areas of the substrate, and not on others, simplifies the processing significantly and opens the way for less complex fabrication of, for instance, nanoscaled electronics. ASD occurs when the surface chemical reactions are disabled on selected areas of the substrate. Since the metal centers in CVD precursor molecules typically have a positive valence, a reductive surface chemistry is required to form a metallic film. This is usually done by using a second precursor, i.e., a molecular reducing agent. The negative standard reduction potential of the first-row transition metals (Ti, V, Cr, Mn, Fe, Co, and Ni) means that CVD of these metals requires either very high temperatures or very powerful molecular reducing agents. This thesis describes a new low X XI List of Articles

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“…Selective metals deposition on metals is in fact well known in the industry with numerous reports of selective W, Cu, and Al deposition reviewed in articles by Gladfelter, 38 Hampden-Smith and Kodas, 292 and Amazawa. 293,294 More recent exemplary work covering selective deposition processes for metals and semi-metals such as Co, [295][296][297][298][299] Ru, [300][301][302][303][304] Ni, 305,306 Mn, 307 Mo, 303 Fe, 303,308 Pt, 309,310 and TiSi 2 [309][310][311] are summarized in Table IV. The deposition methods utilized to achieve selectivity range from typical dry vacuum CVD and ALD processes [293][294][295][296][298][299][300][301][302][303][304][305][306][307][308][309][310][311] to wet electroplating methods.…”

Section: Selective Depositionmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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Selective deposition of CVD iron on silicon dioxide and tungsten

Cited by 13 publications

References 10 publications

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

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