Selective dry etching of InGaP over GaAs in inductively coupled plasmas

Leerungnawarat, P.; Cho, H.; Hays, David C.; Lee, J. W.; Devre, M. W.; Reelfs, B. H.; Johnson, D.; Sasserath, J. N.; Abernathy, C. R.; Pearton, S. J.

doi:10.1007/s11664-000-0049-9

Cited by 10 publications

(4 citation statements)

References 19 publications

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“…Bottom-up [49][50][51] and top-down [52][53][54][55][56][57] fabrication methods can be used to obtain (ordered) micro-and nanostructures in GaInP. In general, bottom-up approaches are based on growing the structures directly, for example by metal-organic vapor phase epitaxy (MOVPE) or solution synthesis.…”

Section: Abbreviationsmentioning

confidence: 99%

GaInP nanowire arrays for color conversion applications

Visser

Désières

Świłło

et al. 2020

Sci Rep

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Color conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial Ga0.51In0.49P/GaAs stacks with pre-determined layer thicknesses. Substrate-free GaInP micro- and nanostructures obtained by selectively etching the GaAs sacrificial layers are then embedded in a transparent film to generate stand-alone color converting films for spectrophotometry and photoluminescence experiments. Finite-difference time-domain simulations and spectrophotometry measurements are used to design and validate the GaInP structures embedded in (stand-alone) transparent films for maximum light absorption and color conversion from blue (450 nm) and green (532 nm) to red (~ 660 nm) light, respectively. It is shown that (embedded) 1 μm-high GaInP nanowire arrays can be designed to absorb ~ 100% of 450 nm and 532 nm wavelength incident light. Room-temperature photoluminescence measurements with 405 nm and 532 nm laser excitation are used for proof-of-principle demonstration of color conversion from the embedded GaInP structures. The (tapered) GaInP nanowire arrays, despite very low fill factors (~ 24%), can out-perform the micro-arrays and bulk-like slabs due to a better in- and out-coupling of source and emitted light, respectively.

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Section: Abbreviationsmentioning

confidence: 99%

GaInP nanowire arrays for color conversion applications

Visser

Désières

Świłło

et al. 2020

Sci Rep

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“…For example, GaInP and AlGaInP have been reported for a wide range of applications such as transistors [1], diodes [2], lasers [3], light emitting diodes (LEDs) [4], solar cells [5] and window layers in solar cells [6]. Top-down [7][8][9][10][11][12] and bottom-up [13][14][15][16] fabrication methods for structuring GaInP have been reported to fabricate nanostructured layers in order to enhance light-matter interactions. Patterning of the initial layer can be beneficial for several features, e.g., absorption enhancement, light extraction enhancement and/or improvement of carrier extraction.…”

Section: A Introductionmentioning

confidence: 99%

Top-Down Fabrication of High Quality Gallium Indium Phosphide Nanopillar/disk Array Structures

Visser

Yapparov

Luca

et al. 2019

2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC)

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In this work, top-down fabrication methods for fabricating high optical quality gallium indium phosphide (GaInP) nanopillar/disk arrays are investigated for optoelectronic applications. Time-resolved photoluminescence (TRPL) measurements are used to characterize the fabricated nanostructures and the results are compared to the properties of a reference GaInP 'slab'. Photoluminescence (PL) spectra and carrier lifetimes are characterized for the fabricated GaInP structures embedded in a highly transparent film. Additionally, using GaInP structures on a gallium arsenide (GaAs) substrate the effect of a sulphur-oleylamine based surface passivation procedure is investigated. This was done for the purpose of improving the PL intensities, increase carrier lifetimes and prevent photodegradation by passivating the surface states.

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“…Dry etching techniques have become an essential part in the manufacturing of microelectronic devices [3]. Conventional high density plasma source like inductively coupled plasma (ICP) was generated by the application of RF power of greater than 500 W [4][5][6][7]. Because of the application of high power during reactive ion etching (RIE) the semiconductor surface is exposed to bombardment by the energetic ions, which greatly enhances the reaction rate of the etching process [8].…”

Section: Introductionmentioning

confidence: 99%

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

Lee

Choi³

et al. 2001

Journal of Information Display

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This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used SF 6 and O 2 gases in the HCP dry etch process. This paper demonstrates very high plasma density of 2?10 12 cm -3 at a discharge current of 20 mA. Silicon etch rate of 1.3 ? m/min was achieved with SF 6 /O 2 plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 sccm, and RF power of 200 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ? m without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

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Selective dry etching of InGaP over GaAs in inductively coupled plasmas

Cited by 10 publications

References 19 publications

GaInP nanowire arrays for color conversion applications

GaInP nanowire arrays for color conversion applications

Top-Down Fabrication of High Quality Gallium Indium Phosphide Nanopillar/disk Array Structures

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

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