2023
DOI: 10.1002/smll.202206824
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Selective Dual‐Ion Modulation in Solid‐State Magnetoelectric Heterojunctions for In‐Memory Encryption

Abstract: toward multifunctional and compact solid-state information devices in the post-Moore era.

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Cited by 2 publications
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“…On the other hand, based on the device's inner high/low conductance state as logic “1”/“0”, the sequence of readout conductance states indicates some implications in the ASCII code. [ 13 , 14 , 15 ] After modulation of the conductance states, the data storage in devices will be modified with encryption to fulfill the in‐memory encryption application. Note that these cutting‐edge hardware encryption methods are typically implemented as separate structures from the neuromorphic computing module.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, based on the device's inner high/low conductance state as logic “1”/“0”, the sequence of readout conductance states indicates some implications in the ASCII code. [ 13 , 14 , 15 ] After modulation of the conductance states, the data storage in devices will be modified with encryption to fulfill the in‐memory encryption application. Note that these cutting‐edge hardware encryption methods are typically implemented as separate structures from the neuromorphic computing module.…”
Section: Introductionmentioning
confidence: 99%