Selective epitaxial growth of GaAs using dimethylgalliumchloride by multi-wafer low-pressure metal organic vapor phase epitaxy (LP-MOVPE)

Yokoyama, Mitsunori; Matsukura, Yusuke; Tanaka, Hitoshi

doi:10.1016/s0022-0248(99)00111-6

Cited by 9 publications

(9 citation statements)

References 16 publications

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“…This reduces diffusion of the group III precursor on the surface of the mask area, as well as diffusion of desorbed species through the gas phase and redeposition in the adjacent openings of the mask. A second solution to the selective growth problem is growth in a chlorine environment, either by adding HCl to the carrier gas [11,13] or by using a Cl-containing precursor [10,15]. The presence of Cl in the growth environment assures the creation of very volatile and stable chlorides, increasing the desorption of group III species from the substrate and inhibiting the redeposition of these desorbed species in the openings of the mask.…”

Section: Article In Pressmentioning

confidence: 99%

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Selective epitaxial growth of GaAs on Ge by MOCVD

Brammertz

Mols

Degroote

et al. 2006

Journal of Crystal Growth

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We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO 2 mask layer. The selectively grown structures have lateral sizes ranging from 1 mm width up to large areas of 1 Â 1 mm 2 . The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused by diffusion of group III precursors over the mask area and in the gas phase. Reduction of the growth pressure inhibits GaAs nucleation on the mask area and reduces the loading effects strongly, but favors the creation of anti-phase domains (APDs) in the GaAs. An optimized growth procedure was developed, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by lowpressure growth of GaAs. This optimized growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of APD growth in the GaAs. X-ray diffraction and photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown layers. r

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Section: Article In Pressmentioning

confidence: 99%

“…The easiest way to achieve this goal is selective epitaxial growth of thin GaAs layers on Ge substrates. Even though selective growth of GaAs on GaAs substrates [8][9][10][11][12][13][14][15][16][17] and on Si substrates [18][19][20][21] has already been studied extensively, very little is known about selective growth of GaAs on Ge.…”

Section: Introductionmentioning

confidence: 99%

Selective epitaxial growth of GaAs on Ge by MOCVD

Brammertz

Mols

Degroote

et al. 2006

Journal of Crystal Growth

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“…[21][22][23][24] Therefore, realizing DDCT cells should be simpler and easier as compared to the previously studied EBAC designs 17,18 relying on a selective-area growth (SAG) process, which is generally demanding for III-arsenide materials and reported only in a few papers, for example, in other studies. [25][26][27] In addition, originating from the high-power large-area LED context, the DDCT approach provides interesting possibilities for concentration photovoltaics. Also, using DDCT structures as the bottom and/or top cell of a multijunction solar cell can prevent current matching problems, as recently suggested.…”

Section: Introductionmentioning

confidence: 99%

Interdigitated back‐contact double‐heterojunction GaInP/GaAs solar cells

Myllynen

Sadi

Oksanen

2020

Progress in Photovoltaics

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Interdigitated back‐contact (IBC) silicon solar cells are coming of age, but the potential of IBC configurations for compound semiconductor solar cells is yet to be explored. We outline an approach to generalize the diffusion‐driven charge transport (DDCT) method, previously studied for IBC light‐emitting diodes, to develop DDCT solar cells, enabling an IBC double‐heterojunction structure. In particular, we simulate and compare the electrical performance of a GaInP/GaAs DDCT solar cell with an ideal one‐dimensional reference cell to establish how the lateral dimensions of the DDCT structures affect their operation. Also, the suitability of the DDCT solar cells for concentration photovoltaics is explored. The results show that the DDCT solar cells with a finger pitch of approximately 10μm can match and even outperform the ideal reference structure under the AM1.5G solar spectrum, due to reduced Shockley‐Read‐Hall recombination. At high solar concentrations, the performance of the smallest pitch DDCT structure is essentially identical with the reference structure up to 100 suns. This suggests that combining the benefits offered by the IBC design with compound semiconductors could allow the development of an entire family of more efficient solar cells.

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“…Numerous examples exist for various materials including GaP, 1 GaAs, [2][3][4][5] InP, [6][7][8][9] and GaN. [10][11][12] Since selectivity in SAG is achieved through the difference in precursor reactivity between mask and substrate, it is generally accepted that these thickness nonuniformities result from gasphase diffusion of unconsumed reactants from regions above the mask to the window.…”

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confidence: 99%

Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition

Liu

Aspnes

2009

Applied Physics Letters

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Using conformal mapping, we derive an analytic expression for the thickness d of a deposited film as a function of the distance r from a mask edge in selective area growth by organometallic chemical vapor deposition (OMCVD). Adjacent to the mask d∼r−1/2, which is clearly different from the exponential dependence observed for large planar surfaces. The result provides a means of distinguishing growth mechanisms in OMCVD.

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Selective epitaxial growth of GaAs using dimethylgalliumchloride by multi-wafer low-pressure metal organic vapor phase epitaxy (LP-MOVPE)

Cited by 9 publications

References 16 publications

Selective epitaxial growth of GaAs on Ge by MOCVD

Selective epitaxial growth of GaAs on Ge by MOCVD

Interdigitated back‐contact double‐heterojunction GaInP/GaAs solar cells

Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition

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