Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

Miki, Nobuhiko; Kikuyama, Hirohisa; Maeno, M.; Murota, Junichi; Ohmi, Toshihito

doi:10.1109/iedm.1988.32916

Cited by 10 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The contamination problems inherent with HF-H20 solutions were avoided and in combination with the UV-ozone technique constitutes part of an ultrapure, integrated dry cleaning process that can be carried out entirely in the gas phase and may replace conventional wet techniques. Removal of metallic impurities could be accomplished by use of a remote microwave plasma (68), by chlorine radical techniques (67) or by photoinduced desorption in reactant gases (69). These new processes being developed are all designed to remove contaminants at low temperatures as volatile compounds without damaging the surface.…”

Section: Alternative Cleaning Techniquesmentioning

confidence: 99%

“…In 1987 FSI Corporation introduced a processing system for anhydrous HF gas phase etching of oxide and silicate films at room temperature (65). Applications to device processing were published in 1988 (66,67). The contamination problems inherent with HF-H20 solutions were avoided and in combination with the UV-ozone technique constitutes part of an ultrapure, integrated dry cleaning process that can be carried out entirely in the gas phase and may replace conventional wet techniques.…”

Section: Brush Scrubbing Fluid Jet and Ultrasonic Techniques-mentioning

confidence: 99%

See 1 more Smart Citation

The Evolution of Silicon Wafer Cleaning Technology

Kern

1990

J. Electrochem. Soc.

1,522

801

View full text Add to dashboard Cite

The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implementation with optimized equipment: from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles. Improvements in wafer drying by use of isopropanol vapor or by "slow-pull" out of hot deionized water are being investigated. Several alternative cleaning methods are also being tested, including choline solutions, chemical vapor etching, and UV/ozone treatments. The evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989.

show abstract

Section: Alternative Cleaning Techniquesmentioning

confidence: 99%

Section: Brush Scrubbing Fluid Jet and Ultrasonic Techniques-mentioning

confidence: 99%

The Evolution of Silicon Wafer Cleaning Technology

Kern

1990

J. Electrochem. Soc.

1,522

801

View full text Add to dashboard Cite

show abstract

“…Anomalous codiffusion effects on electrically active dopants, when germanium is used as a preamorphizing agent, have been reported, however (1); the interpretation of uniquely induced behavior because of the presence of germanium has been challenged (2). There is no disagreement that germanium can be useful for small geometry device fabrication (3,4). Any insight into unusual effects introduced by germanium only can add to the arsenal of technologies to control and orchestrate dopant behavior.…”

Section: Discussionmentioning

confidence: 99%

“…The ongoing advancements in semiconductor equipment technology and process control, combined with more stringent requirements on substrate cleanliness imposed by the fabrication of devices with submicron dimensions have resulted in renewed interest in the vapor-phase HF oxide etch technology (1), first described by Holmes and Snell (2). Cleavelin and Durenko (3), and Miki et al (4) outlined implementations in which the HF vapor etchant was generated by mixing anhydrous HF with a controlled amount of water vapor. Deal et al (5) described a system in which the HF vapor was introduced by passing nitrogen gas over an aqueous solution of HF.…”

mentioning

confidence: 99%

Characterization of Wafer Cleaning and Oxide Etching Using Vapor‐Phase Hydrogen Fluoride

Wong

Moslehi

Reed

1991

J. Electrochem. Soc.

View full text Add to dashboard Cite

The vapor-phase hydrogen fluoride etch of oxides and nitride of silicon have been studied. A new mode of oxide selectivity, not possible with aqueous HF-based processes, gives rise to novel processes with practical applications. The inherent cleanliness and the resulting four to five times improvement in the electrical stress endurance of thin oxides make the vapor-phase process a viable substitute for the traditional processes based on aqueous HF.

show abstract

“…A simple HF vapor etches SiO 2 . [15][16][17][18] Etching here is characterized by a different oxide with a different ER, 19) alcohol hydrating the SiO 2 surface, and enhanced SiO 2 etching. 20) The etch rate is moderate, 10 to 500 nm min −1 , and we find a reactionlimiting space with high selectivity to nitride.…”

Section: Ale For Isotropic Etchingmentioning

confidence: 99%

Isotropic atomic layer etchings of various materials by using dry chemical removal

Ohtake¹,

Miyoshi²,

Shinoda³

et al. 2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Isotropic atomic layer etching (ALE) has become essential technology for fabrication of logic transistors beyond 2nm-generation and NAND memory with more than 100 layers stacking. There are promising etching technologies for isotropic ALE, like reaction limiting, modification limiting and ligand exchange processes. In this work, isotropic ALEs by using dry chemical removal (DCR) tool are discussed. In DCR, radicals from plasma are delivered to enhance the surface modification. And wafer temperature quickly changed by infrared light and electric static chuck for adsorption and desorption accelerations. Silicon ALE can be realized by the combination of surface oxidation and removal by HF vapor. SiO2 can be etched by the alternate flows of HF and NH3 followed by wafer heating. SiN, TiN and W can be etched in nanometer precision by using the fluorination by hydrofluorocarbon radicals and heating. Co and LaO can be etched by diketon exposure and heating.

show abstract

Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

Cited by 10 publications

References 0 publications

The Evolution of Silicon Wafer Cleaning Technology

The Evolution of Silicon Wafer Cleaning Technology

Characterization of Wafer Cleaning and Oxide Etching Using Vapor‐Phase Hydrogen Fluoride

Isotropic atomic layer etchings of various materials by using dry chemical removal

Contact Info

Product

Resources

About