Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks

2012

Appl Nanosci

In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

Section: High-frequency Propertiesmentioning

confidence: 67%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

2012

Appl Nanosci

“…This decrease of both P RF and η L at higher voltage modulation (> 60%) is due to the fall of electric field during negative half cycles of V RF which causes the degradation of transport properties of both Si and 5 shows the RF power output versus optimum frequency plots of Si/3C-SiC MQW DDR IMPATT diodes for the above mentioned bias current densities at the voltage modulation of 60%. The RF power outputs of flat DDR Si, GaAs and InP IMPATT diodes obtained from experimental reports [2][3][4] and large-signal simulation [13] are also shown in Fig. 5.…”

Section: Resultsmentioning

confidence: 99%

“…A large-signal simulation program based on non-sinusoidal voltage excitation (NSVE) model developed by the authors and reported elsewhere [12,13] has been used in this study. The large-signal properties of Si/3C-SiC MQW DDR IMPATTs at and near 94 GHz window frequency are obtained from the simulation and the same are compared with those of flat DDR IMPATT diodes based on Si, GaAs and InP obtained from experimental reports at the same frequency band [2][3][4]. Finally the most preferred doping profile of Si/3C-SiC MQW DDR IMPATT structure has been suggested for improved mm-wave performance.…”

Section: Introductionmentioning

confidence: 93%

“…Among various solid state sources of RF power, IMPATT devices based on Si, GaAs and InP are already established to provide power over a wide frequency bands (1 -300 GHz) [1][2][3][4]. Some wide bandgap (WBG) semiconductors such as SiC, GaN and diamond are recently being explored as potential base materials for high power IMPATT diodes at higher mmwave and terahertz frequency bands (0.1 -10 THz) [5,6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

94 GHz multiquantum well IMPATT diodes based on 3C-SiC/Si material system

Acharya

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)

et al. 2015

A multiquantum well (MQW) double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si/3C-SiC material system has been proposed for high frequency application. One symmetrical and two asymmetrical doping profiles for the proposed hetero-structure device are considered in the present study. The design and optimization of the abovementioned three doping profiles of Si/3C-SiC MQW heterostructure DDR IMPATT diodes have been carried out by simulation technique so that the device operates at millimeter wave W-band (75 -100 GHz) frequencies. The DC and large signal properties of the device are obtained from a large signal simulation program based on non-sinusoidal voltage excited model in which the density gradient theory and Bohm Potential are incorporated to provide a quantum equivalent of driftdiffusion model. The RF output power of the proposed MQW DDR IMPATTs operating at and near 94 GHz atmospheric window frequency are obtained from the simulation output and compared with the available reported values of output power for flat profile DDR IMPATT diodes at the same frequency band.The results show that among the three doping profiles of Si/3C-SiC MQW DDR IMPATT device, the asymmetrical one with higher n and p type doping concentrations of Silicon layers as compared to those of SiC layers is the preferred doping profile for better RF performance at W-band. Keywords-Multiple quantum wells; Si/3C-SiC heterostructures; DDR IMPATTs; millimeter-wave.I.

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)

“…The voltage amplitude modulation is 50%. The state-ofthe-art Si and GaAs p'n p'n single-drift flatprofile IMPATT devices are also shown in figure 2 [9], [lo], [ll], [12], [13]. The agreements between simulation results and experimental data for GaAs and Si are very good for the frequencies below the efficiencyfall-off corner frequency.…”

Section: Large Signal Simulationmentioning

confidence: 87%

Characterization of GaInP avalanche transit time device in millimeter-wave frequencies

Meng

Liao

GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.