Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

Huang, Rong‐Ting; Jiang, Ching-Long; Applebaum, Ami; Renner, Daniel; Zehr, S. W.

doi:10.1007/bf02673347

Cited by 22 publications

(9 citation statements)

References 11 publications

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“…As one of the effective method, the hard mask overhang formed by selective etching can suppress the growth rate at perpendicular direction. 13 In the regrowth shown in Fig. 10, ten InP regrowth of 100 nm each and alternating with 2 nm InGaAs growth, and a clear growth contour can be seen on the cross-section SEM after a quick stain by wet etch.…”

Section: Resultsmentioning

confidence: 93%

MOCVD Regrowth of InP on Hybrid Silicon Substrate

Zhang

Liang

Bowers

2013

ECS Solid State Letters

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We discuss an approach for high quality epitaxial regrowth of III/V materials on silicon substrates. With appropriate direct wafer bonding with modified outgassing channel design, planar and selective regrowth of Indium Phosphide around stripe mesas on directly bonded III/V-Si has been demonstrated with metallorganic chemical vapor deposition (MOCVD). Photoluminescence measurements of regrown films shows high material quality after low temperature wafer bonding and subsequent high temperature epitaxial regrowth.Hybrid silicon technology is one of the most promising solutions for low-cost, highly integrated, silicon-based photonic integrated circuits (PICs). Hybrid silicon technology has the capacity to integrate direct band-gap III/V materials with indirect band-gap silicon on large wafers. 1,2 In the hybrid silicon system, the III/V gain materials are effectively transferred onto a pre-patterned silicon-on-insulator (SOI) substrate with a low-temperature (300 • C) molecular wafer bonding, 3 which is compatible with most of the well-developed III/V process techniques. As a widely used technique in multi-functional III/V PICs, epitaxial MOCVD regrowth enables optimal performance in each component. 4,5 In particular, selective area regrowth is commonly adopted to provide multiple band-gaps on a single wafer for better carrier confinement in a laser or multiple component (e.g., laser, modulator, photodetector, etc.) integration and butt-joint regrowth provides high flexibility on the designs of active and passive sections. Transferring the regrowth technique to the hybrid silicon platform is of practical significance in increasing the design flexibility, integration level and largely improving individual device and overall chip performance. Improved current and carrier confinement, and improved laser injection efficiency should result from this regrowth capability Epitaxial regrowth, however, is generally considered impossible either before or after wafer bonding. If regrowth prior to bonding is used, accurate alignment is required if there is epitaxial structure in the III/V wafer. The rough surface topography after regrowth also prohibits molecular wafer bonding unless well-controlled chemical mechanical polishing (CMP) is used. In term of III/V regrowth after wafer bonding, the elevated epitaxial regrowth temperature becomes the main problem. In MOCVD growth a high ambient temperature is necessary to reach the mass transportation regime of reactants in order to get high quality and controllable materials. 6 For InP and related compounds, this temperature is typically above 550 • C depending on the precursors that are used. But such a relatively high temperature could damage the III/V-to-silicon bond in the hybrid system due to the mismatch between the coefficients of thermal expansion in the hetero-structure, and the outgassing of byproducts in the wafer bonding polymerization reaction, both leading to bubble formation and delamination at the bonding interface. 7 In this paper we discuss the effort of achieving h...

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Section: Resultsmentioning

confidence: 93%

MOCVD Regrowth of InP on Hybrid Silicon Substrate

Zhang

Liang

Bowers

2013

ECS Solid State Letters

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“…Huang et al [5] have tested both SiO 2 and Si 3 N 4 mask materials for etching, the same as for selective epitaxial regrowth, confirming no difference after measuring structures.…”

Section: Introductionmentioning

confidence: 89%

“…To achieve V-shaped corrugations with 1 µm depth 3H 3 PO 4 :1HCl:1H 2 O solution was used [2]. To obtain various shapes of mesa stripes 1HBr:1HNO 3 :1H 2 O solution was applied [5].…”

Section: Introductionmentioning

confidence: 99%

“…The typical information is that the MOVPE epitaxial processes were carried out at low pressure. The value of pressure in MOVPE reactor ranges from 2 kPa [6], through 4.7 kPa and 8 kPa [4,5], finishing at 10 kPa [8]. To characterize different growth rates at various patterned substrate areas, Galeuchet et al from IBM Research Division [8] used multiple heterostructures of InGaAs/InP.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates

Kosior

Radziewicz

Zborowska-Lindert

et al. 2016

Materials Science-Poland

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The main goal of the studies on epitaxial regrowth process of InP on patterned substrates is to gain knowledge about growth rates and interface quality on various areas to improve the fabrication technology for future applications. Prepared samples were measured at every step of the process by scanning electron microscope (SEM), optical microscope with dark field and phase contrast modes, atomic force microscope (AFM) and also using optical profilometer WLI (White Light Interferometer). Fabrication steps were divided into three main groups. First was the epitaxial growth of 5 µm thick InP layer. Next was patterning, which was made by applying a mask film on the epilayer. Shapes of the mesas after wet chemical etching with photoresist as a mask as well as the shapes of mesas slopes were irregular on the whole substrate area. These problems were solved by the use of silicon nitride mask. The mesas shapes and their slopes became then regular, independently of etching depth. Second fabrication step was etching of selected area. Couple of solutions were examined, but in details HCl:H 3 PO 4 mixture in various proportions, which gave the best results in mesas shapes and orientations relative to the substrate. After that, the etching mask material was removed from the epilayer using a buffered hydrofluoric acid (BHF). The last step was epitaxial regrowth. To see how the epitaxial growth process was performed on different areas of patterned substrate it was suggested using a "sandwich", which consisted of 50 layers of indium phosphide and indium gallium arsenide. This idea helped to understand the phenomena occurring during the epitaxial growth on that kind of substrate. The highest growth rate occurred on the top of the mesas and the lowest on their slopes. Described experiments are introduction to the studies on epitaxial growth of buried heterostructure (BH).

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“…To obtain a non-reentrant mesa with mask overhang, pure nonselective wet etching was the most common method. [11][12][13][14][15][16] However, due to the nature of diffusion-limited reaction during the etching, [17] supply of etchants is more abundant near mask edge. Sunken grooves are usually produced around the mask edges.…”

Section: Definition Of Mesa Shapementioning

confidence: 99%

Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier

Xiao¹,

Han²,

Ye³

et al. 2022

Chinese Phys. B

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We have realized integration of evanescent wave coupled photodetector (ECPD) and multi-quantum well (MQW) semiconductor optical amplifier (SOA) on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas. The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth. By comparing the etching profiles of different non-selective etchants, we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2HBr:2H3PO4:K2Cr2O7 wet etching. A high growth temperature of 680 °C is found helpful to enhance planar regrowth. By comparing the growth morphologies and simulating optical transmission along different directions, we determined that waveguides should travel across the regrowth interface along the [110] direction. The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores. ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W. The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.

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Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

Cited by 22 publications

References 11 publications

MOCVD Regrowth of InP on Hybrid Silicon Substrate

MOCVD Regrowth of InP on Hybrid Silicon Substrate

Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates

Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier

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