Selective Growth of Interface Layers from Reactions of Sc(MeCp)₂(Me₂pz) with Oxide Substrates

Abstract

The transformation of an oxide substrate by its reaction with a chemical precursor during atomic layer deposition (ALD) has not attracted much attention, as films are typically deposited on top of the oxide substrate. However, any modification to the substrate surface can impact the electrical and optical properties of the device. We demonstrate herein the ability of a precursor to react deep within an oxide substrate to form an interfacial layer that is distinct from both the substrate and deposited film. This phenomenon is studied using a scandium precursor, Sc(MeCp)(Mepz) (1, MeCp = methylcyclopentadienyl, Mepz = 3,5-dimethylpyrazolate), and five oxide substrates (SiO, ZnO, AlO, TiO, and HfO). In situ Fourier transform infrared (FTIR) spectroscopy shows that at moderate temperatures (∼150 °C) the pyrazolate group of 1 reacts with the surface hydroxyl groups of OH-terminated SiO substrates. However, at slightly higher temperatures (≥225 °C) typically used for the ALD of ScO, there is a direct reaction between 1 and the SiO layer, in addition to chemisorption at the surface hydroxyl groups. This reaction is sustained by sequential exposures of 1 until an ∼2 nm thick passivating interface layer is formed, indicating that 1 reacts with oxygen derived from SiO. A shift of the Si 2p core level position, measured by ex situ X-ray photoelectron spectroscopy, is consistent with the formation of a ScSi O layer. Similar observations are made following the exposure of a ZnO substrate to 1 at 275 °C. In contrast, AlO, TiO, and HfO substrates remain resistant to reaction with 1 under similar conditions, except for a surface reaction occurring in the case of TiO. These striking observations are attributed to the differences in the electrochemical potentials of the elements comprising the oxide substrates to that of scandium. Precursor 1 can react with SiO or ZnO substrates, since the constituent elements of these oxides have less-negative electrochemical potentials than do aluminum, titanium, and hafnium. Additionally, ScO and surface carbonates are deposited on all substrates by gas-phase reactions between 1 and residual water vapor in the reactor. The extent of gas-phase reactions contributing to film growth is governed by the relative pressure of water vapor in the presence of 1. These results suggest caution when using very reactive, oxophilic precursors such as 1 to avoid misinterpreting unconventional film deposition as that resulting from a standard ALD process.