Selective Growth of Well-Aligned Semiconducting Single-Walled Carbon Nanotubes

Abstract

High-density arrays of perfectly aligned single-walled carbon nanotubes (SWNTs) consisting almost exclusively of semiconducting nanotubes were grown on ST-cut single crystal quartz substrates. Raman spectroscopy together with electrical measurements of field effect transistors (FETs) fabricated from the as-grown samples showed that over 95% of the nanotubes in the arrays are semiconducting. The mechanism of selective growth was explored. It is proposed that introducing methanol in the growth process, combined with the interaction between the SWNTs and the quartz lattice, leads to the selective growth of aligned semiconducting nanotubes. Such a high density of horizontally aligned semiconducting SWNTs can be readily used in high current nanoFETs and sensors. This method demonstrates great promise to solve one of the most difficult problems which limits application of carbon nanotubes in nanoelectronicsthe coexistence of metallic and semiconducting nanotubes in samples produced by most, if not all, growth methods.

Selective dispersion of high purity semiconducting single-walled carbon nanotubes with regioregular poly(3-alkylthiophene)s

“…Despite their immense potential, separating sc-SWNTs from metallic (met-) SWNTs from an as-synthesized mixture in high yields remains a challenge [12][13][14][15][16][17][18][19][20][21] . Great progress has been made to develop advanced selective growth methods [22][23][24][25][26][27] . However, further improvements in both afforded yields and subsequently scaling-up processes are still needed.…”

Chirality-controlled synthesis of single-wall carbon nanotubes using vapour-phase epitaxy

“…Selective synthesis of semiconducting or metallic predominated SWCNTs has already been achieved through controlled chemical vapour deposition (CVD) growth [16][17][18] , enabling the fabrication of nanotube field-effect transistors using predominantly semiconducting SWCNTs 19,20 . As a next step, synthesis of SWCNTs with predefined chirality is highly desired.…”

Асимметричные Устройства На Основе Углеродных Нанотрубок Для Детектирования Излучения Терагерцового Диапазона

“…Это скорее всего связано с наличием в таких массивах металлических УНТ (их количество должно составлять около 1/3 от общего количества УНТ в массиве [10]). Однако суще-ствуют процедуры синтеза УНТ методом химического парофазного осаждения, позволяющие получать до 99% полупроводниковых УНТ [11]. Сочетание этих методов с подходами, описанными в данной работе, возможно, позволят создать новый класс недорогих, энергоэффек-тивных и чувствительных детекторов ТГц излучения на основе УНТ.…”