Selective Insulation of Carbon Nanotubes

Abstract

We demonstrate a method for the selective encapsulation of carbon nanotubes in thin parylene films using iron as a sacrificial lift‐off layer. The iron serves as an inhibitor of parylene deposition and prevents the parylene molecules from linking, thus facilitating selective area coating after lift‐off.

A high-performance organic thin-film transistor with Parylene/PMMA bilayer insulation based on P3HT

“…Parylene, serving as the bottom dielectric material with a thickness of approximately 629 nm (refer to Figure S1 ), plays a pivotal role in the OTFTs due to its high molecular weight and crystallinity, which impart superior insulating properties. 52 , 53 It effectively reduces dielectric loss and enhances insulation strength, ensuring device reliability and stability under high electric fields. The Parylene layer, formed on the substrate via vapor deposition, creates a pinhole-free uniform film, laying the foundation for the subsequent spin-coating of the PMMA layer and the P3HT active layer.…”